Semiconductor device and manufacturing method of the same

Abstract

A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

1 . A semiconductor device, comprising:
 a semiconductor over a substrate;   a first conductor and a second conductor over the semiconductor;   a first insulator over the first conductor and the second conductor;   a second insulator over the semiconductor;   a third insulator over the second insulating;   a third conductor over the third insulating; and   a fourth conductor over the third conductor,   wherein the third insulator has a region in contact with a side surface of the first insulator,   wherein the third conductor and the fourth conductor have a function as a gate electrode,   wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, and   wherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.   
     
     
         2 . A semiconductor device, comprising:
 a semiconductor over a substrate;   a first conductor and a second conductor over the semiconductor;   a first insulator over the first conductor and the second conductor;   a second insulator over the semiconductor;   a third insulator over the second insulating;   a third conductor over the third insulating;   a fourth conductor over the third conductor; and   a fifth conductor between the substrate and the semiconductor,   wherein the third insulator has a region in contact with a side surface of the first insulator,   wherein the third conductor and the fourth conductor have a function as a gate electrode,   wherein the fifth conductor has a region overlapping with the third conductor and the fourth conductor,   wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, and   wherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.   
     
     
         3 . A semiconductor device, comprising:
 a semiconductor over a substrate;   a first conductor and a second conductor over the semiconductor;   a first insulator over the first conductor and the second conductor;   a second insulator over the semiconductor;   a third insulator over the second insulating;   a third conductor over the third insulating; and   a fourth conductor over the third conductor,   wherein the third insulator has a region in contact with a side surface of the first insulator,   wherein the semiconductor has a first region overlapping a bottom surface of the first conductor, a second region overlapping a bottom surface of the second conductor, and a third region overlapping a bottom surface of the third conductor, and   wherein a length between a top surface of the semiconductor and the bottom surface of the third conductor is greater than the length between the first region and the third region.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein the semiconductor is an oxide semiconductor. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the semiconductor is an oxide semiconductor. 
     
     
         6 . The semiconductor device according to  claim 3 , wherein the semiconductor is an oxide semiconductor. 
     
     
         7 . The semiconductor device according to  claim 4 , wherein the oxide semiconductor comprises indium, gallium, and zinc. 
     
     
         8 . The semiconductor device according to  claim 5 , wherein the oxide semiconductor comprises indium, gallium, and zinc. 
     
     
         9 . The semiconductor device according to  claim 6 , wherein the oxide semiconductor comprises indium, gallium, and zinc. 
     
     
         10 . The semiconductor device according to  claim 7 , wherein the oxide semiconductor is polycrystalline, a CAAC-OS, a nc-OS, or an a-like OS. 
     
     
         11 . The semiconductor device according to  claim 8 , wherein the oxide semiconductor is polycrystalline, a CAAC-OS, a nc-OS, or an a-like OS. 
     
     
         12 . The semiconductor device according to  claim 9 , wherein the oxide semiconductor is polycrystalline, a CAAC-OS, a nc-OS, or an a-like OS.