Imaging element, method of manufacturing imaging element, and imaging device

Abstract

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductors.

1 . An imaging element, comprising:
 a fixed electric charge layer;   a dielectric layer on the fixed electric charge layer;   a first electrode and a second electrode facing each other; and   a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, wherein   the first electrode is between the photoelectric conversion layer and the dielectric layer, and   the photoelectric conversion layer has an exciton charge separation rate of 1×10 10  s −1  to 1×10 16  s −1  both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.   
     
     
         2 . The imaging element according to  claim 1 , wherein one of the p-type semiconductor and the n-type semiconductor is quinacridone or a quinacridone derivative. 
     
     
         3 . The imaging element according to  claim 1 , wherein one of the p-type semiconductor and the n-type semiconductor is chlorinated boron subphthalocyanine or a chlorinated boron subphthalocyanine derivative. 
     
     
         4 . The imaging element according to  claim 1 , wherein one of the p-type semiconductor and the n-type semiconductor is pentacene or a pentacene derivative. 
     
     
         5 . The imaging element according to  claim 1 , wherein one of the p-type semiconductor and the n-type semiconductor is benzothienobenzothiophene or a benzothienobenzothiophene derivative. 
     
     
         6 . The imaging element according to  claim 1 , wherein one of the p-type semiconductor and the n-type semiconductor is fullerene or a fullerene derivative. 
     
     
         7 . The imaging element according to  claim 1 , wherein the photoelectric conversion layer includes two or more of quinacridone, a quinacridone derivative, chlorinated boron subphthalocyanine, a chlorinated boron subphthalocyanine derivative, pentacene, a pentacene derivative, benzothienobenzothiophene, a benzothienobenzothiophene derivative, fullerene, and a fullerene derivative. 
     
     
         8 . The imaging element according to  claim 1 , wherein
 the photoelectric conversion layer includes quinacridone or a quinacridone derivative as the p-type semiconductor and chlorinated boron subphthalocyanine or a chlorinated boron subphthalocyanine derivative as the n-type semiconductor, and   the p-n junction surface includes, as a combination of a crystal plane of the quinacridone or the quinacridone derivative and a crystal plane of the chlorinated boron subphthalocyanine or the chlorinated boron subphthalocyanine derivative, one of a (100) plane-a (001)A plane, the (100) plane-a (001)B plane, a (010) plane-a (010) plane, the (010) plane-the (001)A plane, the (010) plane-the (001)B plane, a (001) plane-the (001)A plane, and the (001) plane-the (001)B plane.   
     
     
         9 . The imaging element according to  claim 1 , wherein an organic photoelectric converter including one or a plurality of the photoelectric conversion layers, and one or a plurality of inorganic photoelectric converters are stacked, the inorganic photoelectric converters performing photoelectric conversion in a different wavelength range from the organic photoelectric converter. 
     
     
         10 . The imaging element according to  claim 9 , wherein
 the inorganic photoelectric converter is formed to be embedded in a semiconductor substrate, and   the organic photoelectric converter is formed on a side on which a first surface is located of the semiconductor substrate.   
     
     
         11 . The imaging element according to  claim 10 , wherein a multilayer wiring layer is formed on a side on which a second surface is located of the semiconductor substrate. 
     
     
         12 . The imaging element according to  claim 10 , wherein
 the organic photoelectric converter performs photoelectric conversion of green light, and   an inorganic photoelectric converter that performs photoelectric conversion of blue light and an inorganic photoelectric converter that performs photoelectric conversion of red light are stacked inside the semiconductor substrate.   
     
     
         13 . A method of manufacturing an imaging element, the method comprising:
 forming a fixed electric charge layer;   forming a dielectric layer on the fixed electric charge layer;   forming a first electrode;   forming a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor on the first electrode; and   forming a second electrode on the photoelectric conversion layer, wherein   the first electrode is between the photoelectric conversion layer and the dielectric layer, and   the photoelectric conversion layer has an exciton charge separation rate of 1×10 10  s −1  to 1×10 16  s −1  both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.   
     
     
         14 . The method of manufacturing the imaging element according to  claim 13 , wherein heating treatment is performed after forming the photoelectric conversion layer. 
     
     
         15 . The method of manufacturing the imaging element according to  claim 13 , wherein pressurization treatment is performed after forming the photoelectric conversion layer. 
     
     
         16 . The method of manufacturing the imaging element according to  claim 13 , wherein heating treatment and pressurization treatment are performed after forming the photoelectric conversion layer. 
     
     
         17 . An imaging device provided with a plurality of pixels each including one or a plurality of imaging elements, each of the imaging elements comprising:
 a fixed electric charge layer;   a dielectric layer on the fixed electric charge layer;   a first electrode and a second electrode facing each other; and   a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, wherein   the first electrode is between the photoelectric conversion layer and the dielectric layer, and   the photoelectric conversion layer has an exciton charge separation rate of 1×10 10  s −1  to 1×10 16  s −1  both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.