Solid-state image pickup device

Abstract

A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

1 . A device comprising:
 a first substrate;   a second substrate which overlaps the first substrate;   a first structure which is between the first substrate and the second substrate, the first structure including a first film of a dielectric material and a first portion of a conductive material, the first portion being in a groove of the first film; and   a second structure which is between the first structure and the second substrate, the second structure including a second film of a dielectric material and a second portion of a conductive material, the second portion being in a groove of the second film,   wherein the first film is bonded to the second film, and the first portion is bonded to the second portion, and   wherein the first film includes an insulating film which is a silicon nitride film or a silicon carbide film.