Electrode/dielectric barrier material formation and structures

Abstract

Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.

1 .- 20 . (canceled) 
     
     
         21 . An apparatus, comprising:
 a bottom electrode material of a storage node;   a first titanium oxynitride (TiO x N y ) barrier material formed on the bottom electrode material, wherein the first barrier material has a first oxygen content;   a dielectric material formed on the first TiO x N y  barrier material;   a second TiO x N y  barrier material, having a second oxygen content which is lower than the first oxygen content and formed on the dielectric material to increase an effective work function in a range of between 0.0 eV and 0.5 eV.   
     
     
         22 . The apparatus of  claim 21 , further comprising a top electrode in contact with the second TiO x N y  barrier material. 
     
     
         23 . The apparatus of  claim 21 , wherein the first TiO x N y  barrier material and the second TiO x N y  barrier material are formed at a temperature in a range of between 350° to 550° Celsius (C). 
     
     
         24 . The apparatus of  claim 21 , wherein the first TiO x N y  barrier material and the second TiO x N y  barrier material have a thickness in a range of between 3 to 20 angstroms (Å). 
     
     
         25 . The apparatus of  claim 21 , wherein the first TiOxNy barrier material and the second TiOxNy barrier material are formed from a film material. 
     
     
         26 . The apparatus of  claim 21 , wherein the top electrode has a thickness in a range of between 10 angstroms to 40 angstroms. 
     
     
         27 . The apparatus of  claim 21 , wherein the first TiO x N y  barrier material and the second TiO x N y  barrier material are formed on a single-sided pillar capacitor. 
     
     
         28 . The apparatus of  claim 21 , wherein the first TiO x N y  barrier material and the second TiO x N y  barrier material reduces oxygen vacancies in the dielectric material. 
     
     
         29 . An apparatus, comprising:
 a bottom electrode material of a storage node;   a dielectric material formed on the bottom electrode material;   a multilayer barrier material having an oxygen content in a range of between 3-60 atomic % of the barrier material and formed on the dielectric material, wherein the multilayer barrier material comprises:
 a first layer having a first oxygen content and formed in contact with the dielectric material; and 
 a second layer having a second oxygen content which is lower than the first oxygen content and formed on the first layer; and 
   a top electrode formed on the multilayer barrier material and in contact with the second layer.   
     
     
         30 . The apparatus of  claim 29 , wherein the multilayer barrier material is a bi-layer barrier material comprising the first layer and the second layer. 
     
     
         31 . The apparatus of  claim 29 , wherein the multilayer barrier material increases a breakdown voltage of the dielectric material. 
     
     
         32 . The apparatus of  claim 29 , wherein the apparatus is a single-sided pillar capacitor. 
     
     
         33 . The apparatus of  claim 29 , wherein the apparatus is a double-sided capacitor. 
     
     
         34 . The apparatus of  claim 29 , wherein the first barrier material and the second barrier material are formed using a titanium oxynitride (TiO x N y ) material. 
     
     
         35 . The apparatus of  claim 34 , wherein the oxygen content in the TiOxNy film material is in a range of between 3-60 atomic % of the TiOxNy film. 
     
     
         36 . A method, comprising:
 forming a dielectric material of a semiconductor structure; and   forming a titanium oxynitride (TiO x N y ) material on the dielectric material, wherein the TiO x N y  material has an oxygen content in a range of between 3-60 atomic % and is formed by:
 using a titanium tetrachloride (TiCl4) precursor over the dielectric material; 
 using an ammonia (NH3) precursor; 
 using a purging inert gas; 
 repeating iterations of the TiCl4 precursor and the NH3 precursor; and 
 using an oxygen precursor in alternating iterations with the TiCl4 precursor and the NH3 precursor. 
   
     
     
         37 . The method of  claim 36 , further comprising forming the TiOxNy material as a bi-layer material having layers of different oxygen content. 
     
     
         38 . The method of  claim 36 , further comprising forming the TiO x N y  material with a gradient in oxygen content. 
     
     
         39 . The method of  claim 36 , further comprising forming the TiO x N y  material with a thickness in a range of between 3 to 20 angstroms (Å). 
     
     
         40 . The method of  claim 36 , wherein using the oxygen precursor for a time range of between 0 to 600 seconds.