Selective deposition on metal or metallic surfaces relative to dielectric surfaces

Abstract

Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

We claim: 
     
         1 . A method for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second dielectric surface of the substrate, the method comprising one or more deposition cycles comprising:
 contacting the substrate with a first vapor-phase precursor comprising a metal halide; and   contacting the substrate with a second vapor-phase precursor comprising a silane;   wherein the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 50%.   
     
     
         2 . The method of  claim 1 , wherein the metal halide is selected from fluorides or chlorides of Nb, Ta, Mo, W, V and Cr. 
     
     
         3 . The method of  claim 1 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , TaF 5 , MoF x , MoCl x , VF x , VCl x , and CrF x , where x is an integer. 
     
     
         4 . The method of  claim 3 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , and TaF 5 . 
     
     
         5 . The method of  claim 1 , wherein the second dielectric surface comprises Si—O bonds. 
     
     
         6 . The method of  claim 1 , wherein the second dielectric surface comprises a non-conductive surface. 
     
     
         7 . The method of  claim 1 , wherein the deposition cycle is repeated until a desired thickness of material is deposited on the first metal or metallic surface. 
     
     
         8 . The method of  claim 1 , wherein the substrate is contacted with the first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 225° C. 
     
     
         9 . The method of  claim 1 , wherein the silane is selected from monosilane, disilane, and trisilane. 
     
     
         10 . The method of  claim 1 , wherein the silane is an alkylsilane. 
     
     
         11 . The method of  claim 10 , wherein the silane is diethylsilane. 
     
     
         12 . The method of  claim 1 , wherein the second vapor-phase precursor does not comprise plasma. 
     
     
         13 . The method of  claim 1 , wherein the material is a metal silicide. 
     
     
         14 . The method of  claim 13 , additionally comprising treating the metal silicide to form a metal silicate. 
     
     
         15 . The method of  claim 14 , wherein treating the metal silicide comprises contacting the metal silicide with a reactant comprising oxygen. 
     
     
         16 . The method of  claim 15 , wherein the reactant comprising oxygen comprises water, ozone, oxygen atoms, oxygen radicals or oxygen plasma. 
     
     
         17 . The method of  claim 13 , wherein the material is not tungsten silicide. 
     
     
         18 . The method of  claim 13 , wherein the metal silicide is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%. 
     
     
         19 . The method of  claim 1 , wherein the material is a metal carbide. 
     
     
         20 . The method of  claim 1 , wherein the substrate is contacted with the first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 250° C. and the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%.