Light emitting diode device and method of manufacturing the same

Abstract

A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

What is claimed is: 
     
         1 . A method of manufacturing a light emitting diode device, the method comprising:
 preparing a thin film transistor substrate;   forming a first diode electrode and a second diode electrode on the thin film transistor substrate;   forming a first passivation pattern, a micro light emitting diode, and a second passivation pattern between the first diode electrode and the second diode electrode; and   forming a first bridge pattern and a second bridge pattern on the first passivation pattern and the micro light emitting diode,   wherein the forming of the first passivation pattern, the micro light emitting diode, and the second passivation pattern is performed by a single mask process comprising two etching processes.