Semiconductor die with conversion coating

Abstract

A die includes a semiconductor layer, an electrical contact on a first side of the semiconductor layer, a backside electrical contact layer on second side of the semiconductor layer. The die further includes a zinc layer over at least one of the electrical contact or the backside electrical contact layer of the die, and a conversion coating over the zinc layer. The conversion coating includes at least one of zirconium and vanadium. As part of an embedded die package including the die, at least a portion of the conversion coating may adjacent to an electrically insulating substrate of the embedded die package.

What is claimed is: 
     
         1 . A semiconductor package comprising:
 a first circuit layer and a second circuit layer attached to an electrically insulating substrate;   a die embedded in the electrically insulating substrate between the first circuit layer and the second circuit layer, the die including:
 an electrical contact on a first side of a semiconductor layer; and 
 a backside electrical contact layer on a second side of the semiconductor layer; 
 a zinc layer over at least one of the electrical contact or the backside electrical contact layer of the die; and 
   a conversion coating over the zinc layer, wherein the conversion coating includes at least one of zirconium and vanadium.   
     
     
         2 . The semiconductor package of  claim 1 , further comprising:
 a first via formed in the first circuit layer proximate the electrical contact on the first side of the semiconductor layer; and   a first conductive layer within the first via electrically connecting the first circuit layer to the electrical contact on the first side of the semiconductor layer.   
     
     
         3 . The semiconductor package of  claim 2 , wherein the first via is further formed in the electrically insulating substrate, wherein the first conductive layer plates the electrically insulating substrate at the first via. 
     
     
         4 . The semiconductor package of  claim 2 , further comprising:
 a second via formed in the second circuit layer proximate the backside electrical contact layer on the second side of the semiconductor layer; and   a second conductive layer within the second via electrically connecting the second circuit layer to the backside electrical contact layer on the second side of the semiconductor layer.   
     
     
         5 . The semiconductor package of  claim 1 , further comprising a die attach paste between the second circuit layer and the backside electrical contact layer on the second side of the semiconductor layer. 
     
     
         6 . The semiconductor package of  claim 1 , wherein the first circuit layer is a first copper substrate layer, and the second circuit layer is a second copper substrate layer. 
     
     
         7 . The semiconductor package of  claim 1 , wherein the first circuit layer is supported by the electrically insulating substrate along the first surface, and the second circuit layer supported by the electrically insulating substrate along the second surface of the electrically insulating substrate 
     
     
         8 . The semiconductor package of  claim 1 , wherein the electrically insulating substrate is an epoxy substrate. 
     
     
         9 . The semiconductor package of  claim 1 , wherein the conversion coating covers a surface of the backside electrical contact layer adjacent to the electrically insulating substrate, and wherein at least a portion of the conversion coating is adjacent to the electrically insulating substrate. 
     
     
         10 . The semiconductor package of  claim 1 , wherein the conversion coating comprises one or more of a group consisting of:
 zirconium oxide; and   vanadium oxide.   
     
     
         11 . A semiconductor package comprising:
 a semiconductor die including an electrical contact on a first side of the semiconductor layer and a backside electrical contact layer on second side of the semiconductor layer;   a zinc layer over at least one of the electrical contact and over the backside electrical contact layer of the die; and   a conversion coating over the at least one of the electrical contact the zinc layer and over portions of the zinc layer over the backside electrical contact layer, wherein the semiconductor die is attached to a portion of a metal substrate.   
     
     
         12 . The semiconductor package of  claim 11 , wherein the conversion coating includes zirconium. 
     
     
         13 . The semiconductor package of  claim 11 , wherein the conversion coating includes vanadium. 
     
     
         14 . The semiconductor package of  claim 11 , wherein the conversion coating comprises one or more of a group consisting of:
 zirconium oxide; and   vanadium oxide.   
     
     
         15 . The semiconductor package of  claim 11 , wherein the semiconductor die is attached to the portion of the metal substrate via a conductive die attach. 
     
     
         16 . The semiconductor package of  claim 11 , wherein the conversion coating contacts the metal substrate.