Method for preparing doped yttrium aluminum garnet single crystal fiber

Abstract

The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include preparing a doped YAG crystal rod; preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution; performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate; placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core.

What is claimed is: 
     
         1 . A method for preparing a doped Yttrium Aluminum Garnet (YAG) single crystal fiber, comprising:
 preparing a doped YAG crystal rod;   preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution and reacting for a preset time under a preset condition;   performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate;   placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber;   heating the growth zone and the dissolution zone by a two-stage heating device, respectively, a temperature of the dissolution zone being higher than a temperature of the growth zone; and   preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core based on the doped YAG single crystal fiber core and the raw material under a preset pressure.   
     
     
         2 . The method of  claim 1 , wherein the preparing the doped YAG crystal rod includes:
 preparing a doped YAG crystal ingot; and   preparing the doped YAG crystal rod by performing an operation on the doped YAG crystal ingot, the operation including at least one of a cutting operation, a grinding operation, or a polishing operation.   
     
     
         3 . The method of  claim 1 , wherein a diameter of the doped YAG crystal rod is in a range of 1 mm to 2 mm. 
     
     
         4 . The method of  claim 1 , wherein the acid solution includes at least one of a concentrated phosphoric acid solution, a concentrated sulfuric acid solution, or a concentrated hydrochloric acid solution. 
     
     
         5 . The method of  claim 1 , wherein the acid solution includes a concentrated phosphoric acid solution, a mass fraction of the concentrated phosphoric acid solution being in a range of 85% to 90%. 
     
     
         6 . The method of  claim 1 , wherein the acid solution includes a concentrated sulfuric acid solution, a mass fraction of the concentrated sulfuric acid solution being in a range of 67% to 98%. 
     
     
         7 . The method of  claim 1 , wherein the acid solution includes a concentrated hydrochloric acid solution, a mass fraction of the concentrated hydrochloric acid solution being in a range of 36% to 38%. 
     
     
         8 . The method of  claim 1 , wherein the preset condition includes a preset temperature, the preset temperature being in a range of 140° C. to 360° C. 
     
     
         9 . The method of  claim 1 , wherein the preset condition includes a preset stirring rate, the preset stirring rate being in a range of 150 revolutions per minute (rpm) to 350 rpm. 
     
     
         10 . The method of  claim 1 , wherein the preset time is in a range of 4 hours to 8 hours. 
     
     
         11 . The method of  claim 1 , wherein the stirrer is caused to rotate at a preset stirring rate, the preset stirring rate being in a range of 200 rpm to 600 rpm. 
     
     
         12 . The method of  claim 1 , wherein a temperature of the polishing liquid is in a range of 20° C. to 150° C. 
     
     
         13 . The method of  claim 1 , wherein the polishing liquid includes a polishing powder, a mass fraction of the polishing powder in the polishing liquid being in a range of 3% to 20%. 
     
     
         14 . The method of  claim 13 , wherein the polishing powder includes at least one of silicon oxide or corundum. 
     
     
         15 . The method of  claim 13 , wherein a particle diameter of the polishing powder is in a range of 20 nm to 200 nm. 
     
     
         16 . The method of  claim 1 , wherein before preparing the doped YAG single crystal fiber, the method further includes:
 adding a mineralizer into the growth chamber to cause the mineralizer to immerse the raw material and the doped YAG single crystal fiber core.   
     
     
         17 . The method of  claim 16 , wherein the mineralizer includes at least one of a potassium carbonate (K 2 CO 3 ) solution, a sodium carbonate (Na 2 CO 3 ) solution, a potassium fluoride (KF) solution, an ammonium fluoride (NH 4 F) solution, a potassium hydroxide (KOH) solution, or a sodium hydroxide (NaOH) solution. 
     
     
         18 . The method of  claim 16 , wherein a concentration of the mineralizer is in a range of 0.5 mol/L to 5 mol/L. 
     
     
         19 . The method of  claim 1 , wherein
 the temperature of the dissolution zone is in a range of 600° C. to 700° C., and   the temperature of the growth zone is in a range of 580° C. to 680° C.   
     
     
         20 . The method of  claim 1 , wherein the preset pressure is in a range of 110 MPa to 170 MPa.