Device for photo spectroscopy having an atomic-scale bilayer

Abstract

Aspects of the subject disclosure may include, for example, a photo detecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.

What is claimed is: 
     
         1 . A method, comprising:
 applying, by a processing system including a processor, an electric field to a top gate and a bottom gate surrounding a bilayer semiconductor photodetector; and   detecting, by the processing system, incident light striking the bilayer semiconductor photodetector.   
     
     
         2 . The method of  claim 1 , wherein the method further comprises:
 adjusting, by the processing system, the electric field between 0 and 1 V/nm.   
     
     
         3 . The method of  claim 2 , wherein the bilayer semiconductor photodetector comprises a first layer of molybdenum selenide and a second layer of tungsten selenide. 
     
     
         4 . The method of  claim 3 , wherein the incident light comprises a wavelength between near infrared and visible light. 
     
     
         5 . The method of  claim 1 , wherein the bottom gate comprises lithium fluoride. 
     
     
         6 . The method of  claim 5 , wherein the top gate comprises polyethylene oxide. 
     
     
         7 . The method of  claim 6 , wherein the bilayer semiconductor photodetector has a thickness of two atoms. 
     
     
         8 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises molybdenum disulfide. 
     
     
         9 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises tungsten ditelluride. 
     
     
         10 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises titanium selenide. 
     
     
         11 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises titanium sulfide. 
     
     
         12 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises zirconium selenide. 
     
     
         13 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises molybdenum tungsten selenide. 
     
     
         14 . The method of  claim 7 , wherein the bilayer semiconductor photodetector comprises a first layer of molybdenum selenide and a second layer of tungsten selenide. 
     
     
         15 . The method of  claim 7 , further comprising applying one or more resonators to the bilayer semiconductor photodetector. 
     
     
         16 . The method of  claim 15 , wherein the one or more resonators comprise silicon. 
     
     
         17 . A method, comprising:
 forming a bottom gate comprising lithium fluoride;   forming a bilayer semiconductor on the bottom gate comprising a thickness of two atoms;   forming a top gate above the bilayer semiconductor comprising a solid polymer electrolyte;   applying an electric field to the top gate and the bottom gate; and   detecting incident light striking the bilayer semiconductor.   
     
     
         18 . The method of  claim 17 , wherein the bilayer semiconductor comprises one or more of molybdenum disulfide, tungsten ditelluride, titanium selenide, titanium sulfide, zirconium selenide, and molybdenum tungsten selenide. 
     
     
         19 . The method of  claim 17 , wherein the electric field is between 0 and 1 V/nm. 
     
     
         20 . A method of making a photodetector device, comprising:
 forming a bottom gate comprising lithium fluoride;   forming a bilayer semiconductor formed on the bottom gate comprising one or more of molybdenum disulfide, tungsten ditelluride, titanium selenide, titanium sulfide, zirconium selenide, and molybdenum tungsten selenide;   forming a top gate above the bilayer semiconductor comprising a solid polymer electrolyte; and   connecting an electrical source to the top gate and the bottom gate that facilitates an electric field applied across the top gate and the bottom gate.