Slurry composition for chemical mechanical polishing

Abstract

A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including an organic polishing booster including an iminium cation; a carrier; and optionally including inorganic polishing particles, wherein, when included, the inorganic polishing particles are included in the slurry composition in an amount of less than 0.1% by weight, based on a total weight of the slurry composition.

What is claimed is: 
     
         1 . A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
 an organic polishing booster including an iminium cation;   a carrier; and   optionally including inorganic polishing particles,   wherein, when included, the inorganic polishing particles are included in the slurry composition in an amount of less than 0.1% by weight, based on a total weight of the slurry composition.   
     
     
         2 . The slurry composition as claimed in  claim 1 , wherein the organic polishing booster is included in the slurry composition in an amount of about 10 ppm to about 10,000 ppm by weight. 
     
     
         3 . The slurry composition as claimed in  claim 1 , wherein:
 the iminium cation of the organic polishing booster includes an imidazolium cation represented by Formula 1 or Formula 2,   
       
         
           
           
               
               
           
         
         in Formulae 1 and 2, R 1 , R 2 , R 3 , and R 4  are each independently hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof, 
         R 1  and R 2  are separate or are linked to each other to form a ring, and 
         R 3  and R 4  are separate or are linked to each other to form a ring. 
       
     
     
         4 . The slurry composition as claimed in  claim 1 , wherein:
 the iminium cation of the organic polishing booster includes a pyridinium cation represented by Formula 3,   
       
         
           
           
               
               
           
         
         in Formula 3, R 5  is hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof. 
       
     
     
         5 . The slurry composition as claimed in  claim 1 , wherein:
 the iminium cation of the organic polishing booster includes a triazolium cation represented by Formula 4, Formula 5, or Formula 6,   
       
         
           
           
               
               
           
         
         in Formulae 4 to 6, R 6 , R 7 , R 8 , R 9 , R 10 , and R 11  are each independently hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof, 
         R 6  and R 7  are separate or are linked to each other to form a ring, 
         R 8  and R 9  are separate or are linked to each other to form a ring, and 
         R 10  and R 11  are separate or are linked to each other to form a ring. 
       
     
     
         6 . The slurry composition as claimed in  claim 1 , wherein:
 the iminium cation of the organic polishing booster includes a guanidinium cation represented by Formula 7,   
       
         
           
           
               
               
           
         
         in Formula 7, R 12 , R 13 , R 14 , R 15 , R 16 , and R 17  are each independently hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof, and 
         adjacent ones of R 12 , R 13 , R 14 , R 15 , R 16 , and R 17  are separate or are linked to each other to form a ring. 
       
     
     
         7 . The slurry composition as claimed in  claim 1 , wherein the organic polishing booster includes an oligomer or polymer of a monomer that includes the iminium cation. 
     
     
         8 . The slurry composition as claimed in  claim 7 , wherein the organic polishing booster has a weight-averaged molecular weight Mw of about 3,000 to about 100,000. 
     
     
         9 . The slurry composition as claimed in  claim 7 , wherein:
 the organic polishing booster includes a polymer including a repeating unit represented by Formula 8 or Formula 9:   
       
         
           
           
               
               
           
         
         in Formulae 8 and 9, R 1  and R 6  are each independently hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof. 
       
     
     
         10 . The slurry composition as claimed in  claim 1 , wherein the slurry composition has a pH of about 2 to about 7. 
     
     
         11 . The slurry composition as claimed in  claim 1 , wherein the slurry composition is essentially free of silica, alumina, ceria, titania, zirconia, magnesia, germania, and mangania. 
     
     
         12 . The slurry composition as claimed in  claim 11 , wherein the slurry composition is essentially free of the inorganic polishing particles. 
     
     
         13 . A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
 an organic polishing booster;   a surfactant; and   a carrier,   wherein:   the organic polishing booster is included in the slurry composition in an amount of about 10 ppm to about 10,000 ppm by weight, and   the slurry composition is essentially free of inorganic polishing particles.   
     
     
         14 . The slurry composition as claimed in  claim 13 , wherein the slurry composition has a pH of about 2 to about 5. 
     
     
         15 . The slurry composition as claimed in  claim 13 , wherein the organic polishing booster includes an iminium cation. 
     
     
         16 . The slurry composition as claimed in  claim 15 , wherein the slurry composition is essentially free of a dispersion stabilizer. 
     
     
         17 . The slurry composition as claimed in  claim 15 , wherein:
 the iminium cation of the organic polishing booster includes a compound represented by one of Formulae 1 to 7,   
       
         
           
           
               
               
           
         
         in Formulae 1 to 7, le to R′ 7  are each independently hydrogen, a C1 to C20 straight-chain alkyl group, a C3 to C20 branched alkyl group, a C3 to C20 cycloalkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C20 aryl group, a C3 to C20 allyl group, a C1 to C20 alkoxy group, a C6 to C20 aryloxy group, or a combination thereof, 
         R 1  and R 2  are separate or are linked to each other to form a ring, 
         R 3  and R 4  are separate or are linked to each other to form a ring, 
         R 6  and R 7  are separate or are linked to each other to form a ring, 
         R 8  and R 9  are separate or are linked to each other to form a ring, 
         R 10  and R 11  are separate or are linked to each other to form a ring, and 
         adjacent ones of R 12 , R 13 , R 14 , R 15 , R 16 , and R 17  are separate or are linked to each other to form a ring. 
       
     
     
         18 . The slurry composition as claimed in  claim 17 , wherein the organic polishing booster includes an oligomer or polymer obtained by polymerizing a monomer represented by one of Formulae 1 to 7. 
     
     
         19 . The slurry composition as claimed in  claim 13 , wherein the slurry composition has a polishing rate of about 1,600 Å/min to about 3,000 Å/min in a CMP process performed at a pH of about 4.0 and applying a pressure of about 3 psi to a polysilicon film. 
     
     
         20 . A slurry composition for a polysilicon polishing process, the slurry composition comprising:
 an organic polishing booster including an iminium cation;   a surfactant;   a pH control agent; and   a carrier,   wherein:   a pH of the slurry composition is in a range of about 2 to about 5, and   the slurry composition is essentially free of inorganic polishing particles and a dispersion stabilizer for uniform distribution of the inorganic polishing particles.