Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same

Abstract

Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.

1 .- 19 . (canceled) 
     
     
         20 . A method of forming a film comprising one or more TMD monolayers, the method comprising:
 providing a formation substrate having one or more transition metal dichalcogenide (TMD) monolayers disposed on the formation substrate;   dry peeling at least one of the TMD monolayer from the formation substrate; and   transferring the TMD monolayer to a substrate under vacuum to form a film.   
     
     
         21 . The method of  claim 20 , further comprising repeating the providing, dry peeling, and transferring a desired number of times to form a film comprising a plurality of TMD monolayers on the substrate. 
     
     
         22 . The method of one of  claim 20 , wherein the dry peeling at least one of the TMD monolayer(s) comprises attaching a handle layer to a TMD monolayer disposed on the formation substrate and peeling at least one of the TMD monolayer(s) from the formation substrate using the handle layer. 
     
     
         23 . The method of  claim 22 , wherein the handle layer comprises a tape. 
     
     
         24 . The method of  claim 23 , wherein the tape comprises PMMA/thermal release tape. 
     
     
         25 . The method of  claim 22 , wherein after transferring the TMD monolayer(s) to the substrate the TMD monolayer(s) is/are released from the handle layer. 
     
     
         26 . The method of  claim 22 , wherein the releasing includes heating the handle layer to a release temperature. 
     
     
         27 . The method of  claim 22 , wherein the transferring comprises attaching the handle layer to a stamper and contacting the TMD monolayer(s) with the substrate or another TMD monolayer using the stamper. 
     
     
         28 . The method of  claim 20 , wherein the transferring is carried out under a pressure of 1 Torr or less. 
     
     
         29 . A film comprising one or more transition metal dichalcogenide (TMD) monolayer(s), and having a heterostructure comprised of at least two atomically thin monolayer building blocks, wherein the film has less than one bubble defect and/or wrinkle defect per 2 micron×2 micron area. 
     
     
         30 . The film of  claim 29 , wherein an interlayer between two adjacent TMD monolayers is a clean, bubble-free and wrinkle-free interface comprising a substantially constant distance. 
     
     
         31 . The film of  claim 29 , wherein the film comprises two or more TMD monolayers, each of the two or more TMD monolayers is selected from MoS 2  monolayer, WS 2  monolayer, MoSe 2  monolayer, WSe 2  monolayer, MoTe 2  monolayer, WTe 2  monolayer, or NbSe 2  monolayer. 
     
     
         32 . The film of  claim 29 , wherein the film comprises a heterostructure comprising at least two atomically thin monolayer TMD building blocks made from at least two different TMD materials. 
     
     
         33 . The film of  claim 29 , wherein the at least two atomically thin monolayer building blocks are configured to stack and interact via van der Waals (VDW) forces to form the film. 
     
     
         34 . An apparatus comprising one or more film(s) of  claim 29 . 
     
     
         35 . The apparatus of  claim 34 , wherein the apparatus further comprises one or more non-TMD layer(s), wherein an individual non-TMD layer is not in contact with another non-TMD layer. 
     
     
         36 . A device comprising one or more film(s) of  claim 29 . 
     
     
         37 . The device of  claim 36 , wherein the device is a tunnel device, a transparent electronic device, an optical device, a micro-electromechanical systems device, a mechanical device, a photovoltaic device, an optomechanical device, or an optoelectrical device, and/or wherein the device is a capacitor, a diode, a membrane, an optical window, a Josephson junction (JJ) array, a high current H-shape selector array, or a quantum optical resonator. 
     
     
         38 . An atomically-thin circuit comprising at least a portion of a film of  claim 29 . 
     
     
         39 . A heterostructure comprising:
 a first transition metal dichalcogenide (TMD) monolayer;   a second TMD monolayer disposed on the first TMD monolayer;   wherein each of the first and the second TMD monolayer are atomically thin,   wherein the heterostructure comprises less than one bubble defect and/or wrinkle defect per 2 micron×2 micron area, and   wherein each of the first and the second TMD monolayer comprise different materials.