US2021395097A1PendingUtilityA1
Polysilicon rod and method for manufacturing polysilicon rod
Est. expiryJun 23, 2040(~13.9 yrs left)· nominal 20-yr term from priority
C30B 28/08C30B 29/06C01B 33/035C30B 15/00C01P 2002/60C01P 2004/02
70
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Claims
Abstract
A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ⅔ of a radius and that excludes a seed core, average grain boundary characteristics have following features:a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm2, and a random grain boundary length does not exceed 800 mm/mm2.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ⅔ of a radius and that excludes a seed core, average grain boundary characteristics have following features:
a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm 2 , and a random grain boundary length does not exceed 800 mm/mm 2 .
2 . The polysilicon rod according to claim 1 , wherein the coincidence grain boundary ratio exceeds 25%, the grain boundary length exceeds 650 mm/mm 2 , and the random grain boundary length does not exceed 700 mm/mm 2 .
3 . The polysilicon rod according to claim 1 , wherein the coincidence grain boundary ratio does not exceed 90%, and the grain boundary length does not exceed 3000 mm/mm 2 .
4 . A polysilicon rod wherein in an area including the entire polysilicon rod but a seed core, average grain boundary characteristics have following features:
a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm 2 , and a random grain boundary length does not exceed 800 mm/mm 2 .
5 . The polysilicon rod according to claim 4 , wherein the coincidence grain boundary ratio exceeds 25%, the grain boundary length exceeds 650 mm/mm 2 , and the random grain boundary length does not exceed 700 mm/mm 2 .
6 . The polysilicon rod according to claim 4 , wherein the coincidence grain boundary ratio does not exceed 90%, and the grain boundary length does not exceed 3000 mm/mm 2 .
7 . A method for manufacturing a polysilicon rod according to claim 1 , wherein manufacturing conditions are fed back
by using a ratio of coincidence grain boundaries to all grain boundaries as an index that expresses a feature of a grain boundary; and by using a value obtained by dividing a length of a grain boundary that has appeared on a surface when the polysilicon rod is cut at an arbitrary position by a measured area, as an index of a breadth of a grain boundary surface in polysilicon.
8 . The method for manufacturing a polysilicon rod according to claim 7 , wherein a ratio of Σ3 to 9 coincidence grain boundaries is used as an index that expresses a feature of a grain boundary.Join the waitlist — get patent alerts
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