Spin-orbit-torque magnetization rotating element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

Abstract

This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X2YZ with respect to a stoichiometric composition.

1 . A magnetoresistance effect element comprising:
 a conduction layer;   a first ferromagnetic layer laminated on the conduction layer;   a second ferromagnetic layer configured to face the first ferromagnetic layer in a position opposite to the conduction layer with respect to the first ferromagnetic layer;   a non-magnetic layer sandwiched by the first ferromagnetic layer and the conduction layer, wherein   the conduction layer contains a compound represented by XYZ in a stoichiometric composition, and   the X, the Y, and the Z are different elements, respectively,   a main framework of the conduction layer has a structure having a B2 structure and an A2 structure.   
     
     
         2 . The magnetoresistance effect element according to  claim 1 , wherein
 in the compound, a value obtained by adding numbers of outermost shell electrons of the X, the Y, and the Z is 21 or less in a case where a composition of the compound is represented by XYZ.   
     
     
         3 . A magnetoresistance effect element comprising:
 a conduction layer;   a first ferromagnetic layer laminated on the conduction layer;   a second ferromagnetic layer configured to face the first ferromagnetic layer in a position opposite to the conduction layer with respect to the first ferromagnetic layer;   a non-magnetic layer sandwiched by the first ferromagnetic layer and the conduction layer, wherein   the conduction layer contains a compound represented by XYZ or X 2 YZ in a stoichiometric composition,   the X, the Y, and the Z are different elements, respectively,   a main framework of the conduction layer has a structure having: a B2 structure and an A2 structure in a case where the compound is X 2 YZ; and a B2 structure and an A2 structure in a case where the compound is XYZ,   the first ferromagnetic layer contains a ferromagnetic body represented by XYZ or X 2 YZ in a stoichiometric composition,   the X is one or more elements selected from a group consisting of Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Cd, Ir, Pt and Au,   the Y is one or more elements selected from a group consisting of Ti, V, Cr, Mn, Y, Zr, Nb, Hf, Ta, Gd, Tb, Dv, Ho, Er, Fe, Tm, Yb and Lu,   the Z is one or more elements selected from a group consisting of Al, Si, Ga, Ge, As, In, Sn, Sb, Tl, Pb and Bi, and   in the compound, a value obtained by adding numbers of outermost shell electrons of the X, the Y, and the Z is 21 or less in a case where a composition of the compound is represented by XYZ and is 27 or less when the composition of the compound is represented by X 2 YZ.   
     
     
         4 . The magnetoresistance effect element according to  claim 2 , wherein
 the first ferromagnetic layer contains a ferromagnetic body represented by Co 2 YZ in the stoichiometric composition,   the Y is at least one of Mn and Fe, and   the Z is one or more of elements selected from a group consisting of Al, Si, Ga, and Ge.   
     
     
         5 . A magnetoresistance effect element comprising:
 a conduction layer;   a first ferromagnetic layer laminated on the conduction layer;   a second ferromagnetic layer configured to face the first ferromagnetic layer in a position opposite to the conduction layer with respect to the first ferromagnetic layer;   a non-magnetic layer sandwiched by the first ferromagnetic layer and the conduction layer, wherein   the conduction layer contains a compound represented by X 2 YZ in a stoichiometric composition,   the X, the Y, and the Z are different elements, respectively,   a main framework of the conduction layer has a structure having a B2 structure and an A2 structure, and   in the compound, a value obtained by adding numbers of outermost shell electrons of the X, the Y, and the Z is 24 or less in a case where a composition of the compound is represented by XYZ.   
     
     
         6 . A magnetic memory, comprising:
 a plurality of the spin-orbit-torque magnetoresistance effect elements according to  claim 1 .   
     
     
         7 . A magnetic memory, comprising:
 a plurality of the spin-orbit-torque magnetoresistance effect elements according to  claim 2 .   
     
     
         8 . A magnetic memory, comprising:
 a plurality of the spin-orbit-torque magnetoresistance effect elements according to  claim 3 .   
     
     
         9 . A magnetic memory, comprising:
 a plurality of the spin-orbit-torque magnetoresistance effect elements according to  claim 4 .   
     
     
         10 . A magnetic memory, comprising:
 a plurality of the spin-orbit-torque magnetoresistance effect elements according to  claim 5 .   
     
     
         11 . A magnetization rotational element comprising:
 a conduction layer; and   a first ferromagnetic layer laminated on the conduction layer, wherein   the conduction layer contains a compound represented by XYZ in a stoichiometric composition, and   in a case where the compound is XYZ, a main framework of the conduction layer has a structure having a C1 b  structure, B2 structure and A2 structure.   
     
     
         12 . The magnetization rotational element according to the  claim 11 , wherein
 in the compound, a value obtained by adding numbers of outermost shell electrons of the X, the Y, and the Z is 21 or less in a case where a composition of the compound is represented by XYZ.   
     
     
         13 . A magnetization rotational element comprising:
 a conduction layer; and   a first ferromagnetic layer laminated on the conduction layer, wherein   the conduction layer contains a compound represented by X 2 YZ in a stoichiometric composition, and   in the compound, a value obtained by adding numbers of outermost shell electrons of the X, the Y, and the Z is 24 or less in a case where a composition of the compound is represented by XYZ.