Tunnel magnetoresistance (tmr) element having cobalt iron and tantalum layers

Abstract

In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.

What is claimed is: 
     
         1 . A tunnel magnetoresistance (TMR) element, comprising:
 a free layer comprising:
 a nickel iron layer; 
 a first cobalt iron layer in direct contact with the NiFe layer; 
 a first tantalum layer in direct contact with the first CoFe layer; and 
 a first cobalt iron boron in direct contact with the first Ta layer; 
   a magnesium oxide layer in direct contact with the first CoFeB layer;   a reference layer in direct contact with the MgO layer, the reference layer comprising:
 a second CoFeB layer in direct contact with the MgO layer; 
 a second CoFe layer; 
 a second Ta layer in direct contact with the second CoFeB layer and the second CoFe layer; 
 a ruthenium layer in direct contact with the second CoFe layer; 
 a third CoFe layer in direct contact with the Ru layer; and 
 a platinum manganese layer in direct contact with the third CoFe layer. 
   
     
     
         2 . The TMR element of  claim 1 , further comprising a seed layer in direct contact with the PtMn layer. 
     
     
         3 . The TMR element of  claim 1 , further comprising an electrode disposed below the seed layer. 
     
     
         4 . The TMR element of  claim 3 , wherein the seed layer is in direct contact with the electrode. 
     
     
         5 . The TMR element of  claim 2 , further comprising a cap layer in direct contact with the free layer. 
     
     
         6 . The TMR element of  claim 5 , wherein the NiFe layer is in direct contact with the cap layer 
     
     
         7 . The TMR element of  claim 1 , further comprising a cap layer in direct contact with the free layer. 
     
     
         8 . The TMR element of  claim 7 , wherein the NiFe layer is in direct contact with the cap layer. 
     
     
         9 . The TMR element of  claim 1 , wherein the second CoFe layer and/or the first CoFeB layer is 1.0 nanometer thick. 
     
     
         10 . The TMR element of  claim 1 , wherein the second CoFeB layer and/or the third CoFe layer is 0.9 nanometers thick. 
     
     
         11 . The TMR element of  claim 1 , wherein the first and/or second Ta layer is 0.1 nanometers thick. 
     
     
         12 . The TMR element of  claim 1 , wherein a thickness of the first and/or second Ta layer is between 0.05 nanometers and 0.3 nanometers. 
     
     
         13 . The TMR element of  claim 1 , wherein the second CoFeB layer is 0.9 nanometers thick,
 wherein the third CoFe layer is 0.9 nanometers thick,   wherein the first CoFeB layer is 1.0 nanometer thick, and   wherein the second CoFe layer is 1.0 nanometer thick.   
     
     
         14 . The TMR element of  claim 13 , wherein the first and/or second tantalum layer is 0.1 nanometers thick. 
     
     
         15 . The TMR element of  claim 13 , wherein a thickness of the first and/or second tantalum layer is between 0.05 nanometers and 0.3 nanometers. 
     
     
         16 . The TMR element of  claim 15 , further comprising a seed layer in direct contact with the PtMn layer. 
     
     
         17 . The TMR element of  claim 16 , further comprising an electrode disposed below the seed layer. 
     
     
         18 . The TMR element of  claim 17 , wherein the seed layer is in direct contact with the electrode. 
     
     
         19 . The TMR element of  claim 18 , further comprising a cap layer in direct contact with the free layer. 
     
     
         20 . The TMR element of  claim 19 , wherein the NiFe layer is in direct contact with the cap layer