Component and semiconductor manufacturing device

Abstract

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

1 . A method of manufacturing a component to comprise a film containing crystalline yttrium oxide, wherein in an X-ray diffraction pattern of the film, a ratio I m /I c  of a maximum intensity I m  of a peak attributed to monoclinic yttrium oxide to a maximum intensity I c  of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I m /I c ≤0.002, wherein the method comprises:
 repeatedly performing a sputtering process followed by an oxidation process, 
 wherein the oxidation process consists of heating the film in an oxygen-containing atmosphere at a temperature of 1000° C. or less for one second or less. 
 
     
     
         2 . The method according to  claim 1 , wherein the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide. 
     
     
         3 . The method according to  claim 1 , wherein a thickness of the film is 100 μm or less. 
     
     
         4 . The method according to  claim 1 , wherein a thickness of the film is 10 μm or more and 50 μm or less. 
     
     
         5 . The method according to  claim 1 , wherein an average grain diameter of the crystalline yttrium oxide is 10 nm or less. 
     
     
         6 . The method according to  claim 1 , wherein in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnification, a pore is not present or a maximum diameter of a pore is 10 nm or less. 
     
     
         7 . The method according to  claim 1 , wherein:
 a content of yttrium oxide in the film is 99 mass % or more;   a content of aluminum in the film is 100 mass ppm or less; a content of magnesium in the film is 20 mass ppm or less;   a content of sodium in the film is 50 mass ppm or less;   a content of zinc in the film is 100 mass ppm or less;   a content of calcium in the film is 100 mass ppm or less;   a content of potassium in the film is 5 mass ppm or less; and   a content of nickel in the film is 10 mass ppm or less.   
     
     
         8 . The method according to  claim 1 , wherein a tensile strength B of the film obtained after performing three cycles of exposing the component to a temperature environment between 400° C. and 600° C. for 30 minutes and then exposing the component to a temperature environment of 25° C. for 30 minutes, with respect to a tensile strength A of the film under a temperature environment of 25° C., satisfies an expression: ((A−B)/A)×100%≤20%. 
     
     
         9 . The method according to  claim 1 , wherein
 the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide,   a thickness of the film is 100 μm or less, and   in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnifications, a pore is not present or a maximum diameter of a pore is 10 nm or less.   
     
     
         10 . The method according to  claim 1 , wherein
 the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide,   a thickness of the film is 100 μm or less,   in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnifications, a pore is not present or a maximum diameter of a pore is 10 nm or less,   a content of yttrium oxide in the film is 99 mass % or more,   a content of aluminum in the film is 100 mass ppm or less,   a content of magnesium in the film is 20 mass ppm or less,   a content of sodium in the film is 50 mass ppm or less,   a content of zinc in the film is 100 mass ppm or less,   a content of calcium in the film is 100 mass ppm or less,   a content of potassium in the film is 5 mass ppm or less, and   a content of nickel in the film is 10 mass ppm or less.