US2021376806A1PendingUtilityA1

Internal power supply for amplifiers

Assignee: SEMICONDUCTOR COMPONENTS IND LLCPriority: Feb 4, 2019Filed: Aug 11, 2021Published: Dec 2, 2021
Est. expiryFeb 4, 2039(~12.5 yrs left)· nominal 20-yr term from priority
H03F 2200/516H03F 3/45475H03F 2200/411H03F 1/0211H03F 3/4521H03F 2200/513H03F 3/45928
60
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Claims

Abstract

An internal power supply for an amplifier is disclosed. The internal power supply floats according to a common mode voltage at the input to the amplifier and according to an input voltage at an input stage of the amplifier. Powering the input stage of the amplifier using the floating supply allows for the use of low voltage devices even when the range of possible common mode voltages includes high voltages. The use of low voltage devices can correspond to performance improvement for the amplifier and can help reduce the size of the amplifier. The internal supply can accommodate both positive and negative common mode voltages and can be used for current sense amplifiers of any gain.

Claims

exact text as granted — not AI-modified
1 . A power supply comprising:
 a selector circuit configured to receive a common mode voltage (V CM ), an upper external voltage (V DD ), and a lower external voltage (V GND ), the selector circuit configured to:   output a maximum voltage (V MAX ) as the larger of the common mode voltage (V CM ) and the upper external voltage (V DD ); and   output a minimum voltage (V MIN ) as the smaller of the common mode voltage (V CM ) and the lower external voltage (V GND ); and   a floating supply circuit configured to receive V MAX  and V MIN  from the selector circuit, the floating supply circuit configured to generate a floating voltage range defined by an upper internal voltage (V INTP ) and a lower internal voltage (V INTN ), the floating voltage range is level-shifted according to V MAXX  and V MIN .   
     
     
         2 . The power supply according to  claim 1 , wherein V CM  is in a range that includes positive and negative voltages. 
     
     
         3 . The power supply according to  claim 1 , wherein the selector circuit includes:
 a first pair of diodes are configured to connect the larger of V CM  and V DD  to a maximum-voltage output; and   a second pair of diodes configured to connect the smaller of V CM  and V GND  to a minimum-voltage output. cm  4 . The power supply according to  claim 3 , wherein the first pair of diodes and the second pair of diodes are Schottky diodes.   
     
     
         5 . The power supply according to  claim 3 , wherein:
 the first pair of diodes are cathode-coupled at the maximum-voltage output; and   the second pair of diodes are anode-coupled at the minimum-voltage output.   
     
     
         6 . The power supply according to  claim 1 , wherein the selector circuit includes:
 a first pair of transistors configured to switch the larger of V CM  and V DD  to a maximum-voltage output; and   a second pair of transistors configured to switch the smaller of V CM  and V GND  to a minimum-voltage output.   
     
     
         7 . The power supply according to  claim 6 , wherein the first pair of transistors include:
 a first PMOS transistor connected between V CM  and the maximum-voltage output, the first PMOS transistor switched by V DD ; and   a second PMOS transistor connected between V DD  and the maximum-voltage output, the second PMOS transistor switched by V CM .   
     
     
         8 . The power supply according to  claim 6 , wherein the second pair of transistors include:
 a first NMOS transistor connected between V CM  and the minimum-voltage output, the first NMOS transistor switched by V GND ; and   a second NMOS transistor connected between V GND  and the minimum-voltage output, the second NMOS transistor switched by V CM .   
     
     
         9 . The power supply according to  claim 1 , wherein the floating supply circuit includes a regulation device coupled between a first output of the floating supply circuit and a second output of the floating supply circuit, the first output configured to output V INTP  and the second output configured to output V INTN . 
     
     
         10 . The power supply according to  claim 9 , wherein the regulation device is Zener diode. 
     
     
         11 . The power supply according to  claim 9 , wherein the floating supply circuit includes:
 an NMOS transistor configured to couple the first output to V MAX  when V CM  is greater than V DD ; and   a PMOS transistor configured to couple the second output to V MIN  when V CM  is less than V GND .   
     
     
         12 . A method for generating a floating voltage range, the method comprising:
 receiving a common mode voltage (V CM ), an upper external voltage (V DD ), and a lower external voltage (V GND );   generating a maximum voltage (V MAX ) as the larger of the common mode voltage (V CM ) and the upper external voltage (V DD );   generating a minimum voltage (V MIN ) as the smaller of the common mode voltage (V CM ) and the lower external voltage (V GND );   floating an upper internal voltage (V INTP ) to V MAX  or a lower internal voltage (V INTN ) to V MIN  based on V CM ; and   regulating a voltage range between V INTP  and V INTN  to generate the floating voltage range.   
     
     
         13 . The method for generating a floating voltage range according to  claim 12 , wherein the V CM  is in a range that includes positive and negative voltages. 
     
     
         14 . The method for generating a floating voltage range according to  claim 12 , wherein:
 generating V MAX  includes using a first pair of diodes to switch the larger of V CM  and V DD  to a first output of a selector circuit; and   generating V MIN  includes using a second pair of diodes to switch the smaller of V CM  and V GND  to a second output of the selector circuit.   
     
     
         15 . The method for generating a floating voltage range according to  claim 14 , wherein:
 the first pair of diodes and the second pair of diodes are Schottky diodes.   
     
     
         16 . The method for generating a floating voltage range according to  claim 12 , wherein:
 generating V MAX  includes using a first pair of transistors to switch the larger of V CM  and V DD  to a first output of a selector circuit; and   generating V MIN  includes using a second pair of transistors to switch the smaller of V CM  and V GND  to a second output of the selector circuit.   
     
     
         17 . The method for generating a floating voltage range according to  claim 14 , wherein:
 the first pair of transistors are PMOS transistors, and the second pair of transistors are NMOS transistors.   
     
     
         18 . The method for generating a floating voltage range according to  claim 12 , wherein the
 floating V INTP  to V MAX  or V INTN  to V MIN  based on V CM  includes:   coupling V INTP  to V MAX  when V CM  is greater than V DD ; and   coupling V INTN  to V MIN  when V CM  is less than V GND .   
     
     
         19 . The method for generating a floating voltage range according to  claim 12 , wherein the regulating a voltage range between V INTP  and V INTN  to generate the floating voltage range includes:
 biasing a regulation device between V INTP  and V INTN  to generate the voltage range between V INTP  and V INTN .   
     
     
         20 . A floating power supply comprising:
 a selector circuit configured to receive a common mode voltage (V CM ), an upper external voltage (V DD ), and a lower external voltage (V GND ), the selector circuit including:   a maximum voltage (V MAX ) circuit configured to output the larger of V CM  and V DD  as V MAX ; and   a minimum voltage (V MIN ) circuit configured to output the smaller of V CM  and V GND  as V MIN ; and   a floating supply circuit configured to receive V MAX  and V MIN  from the selector circuit and to output an upper internal voltage (V INTP ) and a lower internal voltage (V INTN ), the floating supply circuit including:   a regulation device configured to maintain a voltage difference between V INTP  and V INTN ;   a first transistor configured to pull-up V INTP  to V MAX  when V CM  is larger than V DD ; and   a second transistor configured to pull-down V INTN  to V MIN  when V CM  is smaller than V GND .

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