Photoelectric conversion element, imaging device, and electronic apparatus

Abstract

A photoelectric conversion element including a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

What is claimed is: 
     
         1 . A photoelectric conversion element, comprising:
 a first electrode;   a second electrode that faces the first electrode; and   a photoelectric conversion layer between the first electrode and the second electrode, wherein
 the photoelectric conversion layer comprises at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, 
 the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative, and 
 the photoelectric conversion layer has a maximum absorption wavelength in a range between 450 nm and 650 nm. 
   
     
     
         2 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than two times an absorption coefficient at 450 nm. 
     
     
         3 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than five times an absorption coefficient at 450 nm. 
     
     
         4 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than ten times an absorption coefficient at 450 nm. 
     
     
         5 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than ten times an absorption coefficient at 650 nm. 
     
     
         6 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than twenty times an absorption coefficient at 650 nm. 
     
     
         7 . The photoelectric conversion element according to  claim 1 , wherein an absorption coefficient at the maximum absorption wavelength is more than thirty times an absorption coefficient at 650 nm. 
     
     
         8 . The photoelectric conversion element according to  claim 1 , wherein the carrier dopant is at least one of triphenylmethane derivative represented by a following formula (1), acridine derivative represented by a following formula (2), xanthene derivative represented by a following formula (3), and benzimidazole derivative represented by a following formula (4): 
       
         
           
           
               
               
           
         
         where R1 to R13 denote, each independently: hydrogen atom; halogen atom; a linear chain, branched, or cyclic alkyl group; thioalkyl group; thioaryl group; arylsulfonyl group; alkylsulfonyl group; amino group; alkylamino group; arylamino group; hydroxy group; alkoxy group; acylamino group; acyloxy group; phenyl group; carboxy group; carboxoamide group; carboalkoxy group; acyl group; sulfonyl group; cyano group; and nitro group; or a derivative, wherein 
         R1 to R13 form a cycle by bonding with each other, and 
         a to h are each an integer of 0 or more. 
       
     
     
         9 . The photoelectric conversion element according to  claim 1 , wherein the subphthalocyanine derivative is at least one of compounds represented by following formulae (5) and (6): 
       
         
           
           
               
               
           
         
         where R14 to R25 and X denote, each independently: hydrogen atom; halogen atom; a linear chain, branched, or cyclic alkyl group; thioalkyl group; thioaryl group; arylsulfonyl group; alkylsulfonyl group; amino group; alkylamino group; arylamino group; hydroxy group; alkoxy group; acylamino group; acyloxy group; phenyl group; carboxy group; carboxoamide group; carboalkoxy group; acyl group; sulfonyl group; cyano group; nitro group; heterocyclic group; or a derivative, wherein 
         mutually adjacent R14 to R25 form a cycle by bonding with each other, and 
         M denotes boron, or a divalent or trivalent metal. 
       
     
     
         10 . The photoelectric conversion element according to  claim 1 , wherein
 the photoelectric conversion layer includes a p-type semiconductor, and   the p-type semiconductor comprises a quinacridone derivative.   
     
     
         11 . The photoelectric conversion element according to  claim 10 , wherein
 the photoelectric conversion layer further includes a n-type semiconductor, and   the n-type semiconductor comprises a fullerene derivative.   
     
     
         12 . An imaging device, comprising:
 a plurality of pixels, wherein
 each of the plurality of pixels comprises at least one organic photoelectric conversion section, and 
 each of the at least one organic photoelectric conversion section comprises:
 a first electrode; 
 a second electrode that faces the first electrode; and 
 a photoelectric conversion layer between the first electrode and the second electrode, wherein
 the photoelectric conversion layer comprises at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, 
 the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative, and 
 the photoelectric conversion layer has a maximum absorption wavelength in a range between 450 nm and 650 nm. 
 
 
   
     
     
         13 . The imaging device according to  claim 12 , wherein an absorption coefficient at the maximum absorption wavelength is more than two times an absorption coefficient at 450 nm. 
     
     
         14 . The imaging device according to  claim 12 , wherein an absorption coefficient at the maximum absorption wavelength is more than five times an absorption coefficient at 450 nm. 
     
     
         15 . The imaging device according to  claim 12 , wherein an absorption coefficient at the maximum absorption wavelength is more than ten times an absorption coefficient at 450 nm. 
     
     
         16 . The imaging device according to  claim 12 , wherein
 the at least one organic photoelectric conversion section and at least one inorganic photoelectric conversion section are stacked in each of the plurality of pixels, and   the at least one inorganic photoelectric conversion section is configured to execute a photoelectric conversion of a wavelength region different from a wavelength region of the at least one organic photoelectric conversion section.   
     
     
         17 . An electronic apparatus, comprising:
 an imaging device that comprises a plurality of pixels, wherein
 each of the plurality of pixels comprises at least one organic photoelectric conversion section, and 
 each of the at least one organic photoelectric conversion section comprises:
 a first electrode; 
 a second electrode that faces the first electrode; and 
 a photoelectric conversion layer between the first electrode and the second electrode, wherein
 the photoelectric conversion layer comprises at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, 
 the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative, and 
 the photoelectric conversion layer has a maximum absorption wavelength in a range between 450 nm and 650 nm. 
 
 
   
     
     
         18 . The electronic apparatus according to  claim 17 , wherein an absorption coefficient at the maximum absorption wavelength is more than two times an absorption coefficient at 450 nm. 
     
     
         19 . The electronic apparatus according to  claim 17 , wherein an absorption coefficient at the maximum absorption wavelength is more than five times an absorption coefficient at 450 nm. 
     
     
         20 . The electronic apparatus according to  claim 17 , wherein an absorption coefficient at the maximum absorption wavelength is more than ten times an absorption coefficient at 450 nm.