Semiconductor device and manufacturing method

Abstract

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first substrate, including:
 a first electrode; and 
 a first insulating layer; 
   a second substrate, including:
 a second electrode; and 
 a second insulating layer; and 
   an insulating thin film disposed between the first insulating layer and the second insulating layer,   wherein in a first connection region including the first electrode, the second electrode, and a non-conductive portion, a first portion of the first electrode and a first portion of the second electrode are bonded and electrically connected to each other, and the non-conductive portion is disposed between a second portion of the first electrode and a second portion of the second electrode, and   wherein the first insulating layer and the second insulating layer attach the insulating thin film.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the insulating thin film includes first and second layers, 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the first insulating thin film layer and the second insulating thin film layer are bonded to each other. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the first substrate and the second substrate are bonded via the insulating thin film. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the non-conductive portion is a part of the insulating thin film. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the first substrate includes a first insulating film, wherein the first electrode includes a first electrode film and a barrier metal layer, and wherein the barrier metal layer is between the first electrode film and the first insulating film. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first electrode includes copper. 
     
     
         8 . The semiconductor device according to  claim 7 , wherein the second electrode includes copper. 
     
     
         9 . The semiconductor device according to  claim 2 , wherein the first insulating thin film layer and the second insulating thin film layer are made of different materials. 
     
     
         10 . The semiconductor device according to  claim 1 , wherein the insulating thin film is a nitride film or an oxide film. 
     
     
         11 . A semiconductor device, comprising:
 a first substrate including a first electrode at a first surface side of the first substrate; and   a second substrate including a second electrode,   wherein the first electrode and the second electrode are bonded and electrically connected to each other, and   wherein a bonding interface of the first electrode and the second electrode has a jagged shape.   
     
     
         12 . The semiconductor device according to  claim 11 , further comprising: a non-conductive portion disposed at the bonding interface of the first electrode and the second electrode. 
     
     
         13 . The semiconductor device according to  claim 12 , wherein the non-conductive portion is an insulating thin film, wherein the insulating thin film includes first and second layers, wherein the first substrate includes the first insulating thin film layer, wherein the second substrate includes the second insulating thin film layer, and wherein the first insulating thin film layer and the second insulating thin film layer are bonded to each other. 
     
     
         14 . The semiconductor device according to  claim 11 , wherein the first substrate and the second substrate are bonded via an insulating film. 
     
     
         15 . The semiconductor device according to  claim 12 , wherein the non-conductive portion is a part of an insulating film. 
     
     
         16 . The semiconductor device according to  claim 11 , wherein the first substrate includes a first insulating film, wherein the first electrode includes a first electrode film and a barrier metal layer, and wherein the barrier metal layer is between the first electrode film and the first insulating film. 
     
     
         17 . The semiconductor device according to  claim 11 , wherein the first electrode includes copper. 
     
     
         18 . The semiconductor device according to  claim 17 , wherein the second electrode includes copper. 
     
     
         19 . The semiconductor device according to  claim 13 , wherein the first insulating thin film layer and the second insulating thin film layer are made of different materials. 
     
     
         20 . The semiconductor device according to  claim 13 , wherein the insulating thin film is a nitride film or an oxide film.