Process for coating a conductive component and conductive component coating

Abstract

The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process comprises the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.

1 .- 8 . (canceled) 
     
     
         9 . A conductive component coating, characterized in that it is produced by a process for coating a conductive component, the process for coating the conductive component being characterized in that the conductive component is in contact with a support, capable of undergoing polarity inversions within a plasma reactor and comprising the steps of:
 a) cleaning of the surface of the conductive component by electron bombardment, wherein the gases in the plasma atmosphere are selected from the group consisting of hydrogen, oxygen, argon, nitrogen or a combination thereof, in a temperature range between 20 and 300° C. and a working pressure between 0.1 and 10 Torr, with positive potential support;   b) deposition of mechanical support in the conductive component   comprising gas ion bombardment selected from a combination of two or more gases of the group: hydrogen, oxygen, argon, nitrogen, methane, acetylene, or other ionizable hydrocarbon gas, in a temperature range between 200 and 650° C., working pressure between 0.1 and 10 Torr and voltage between −200 and −1000 V applied to the conductor component support;   c) topographic modification comprising gas ion bombardment selected from a combination of two or more gases of the group: hydrogen, oxygen, argon, nitrogen, methane, acetylene, or other ionizable hydrocarbon gas, in a temperature range between 200 and 650° C., working pressure between 0.1 and 10 Torr and voltage between −200 and −1000 V applied to the conductor component support;   d) deposition of the chemical support layer in the conducting component, by gas ion bombardment, wherein the gases are selected from the group consisting of gaseous or liquid precursors, containing elements with chemical affinity with the carbon, in a temperature range between 200 and 350° C., working pressure between 0.1 and 10 Torr, connected time of the plasma source between 75 and 90% of the time of a DC source pulse, which operates at a frequency of 50 to 150 kHz, and voltage between −300 and −1000 V applied to the conductor component support;   e) deposition of amorphous carbon layer on the surface of the chemical support layer by gaseous hydrocarbon ions bombardment, wherein the gases in the plasma atmosphere are selected from the group consisting of at least one liquid precursor with at least one metal radical or the combination of such precursor with at least one ionizable hydrocarbon gas and generating ions which are deposited on the component, in a temperature range of 200 to 350° C., working pressure between 1 and 3 Torr, connected time of the plasma source between 75 and 90% of the time of a DC source pulse, which operates at a frequency of 50 to 150 kHz and voltage between −300 and −1000 V applied to the conductive component support,   further characterized in that step b) comprises:
 the formation of at least one mechanical support layer, by nitriding, cementation, carbonitriding, boreeting; or 
 the formation of at least one superficial enrichment diffusion layer with matrix hardening elements of the conductive component; or 
 a combination thereof, 
   wherein the coating comprises:
 at least a first mechanical support layer, in direct contact with the surface of the conductive component; 
 at least one chemical support layer, between the mechanical support layer and an amorphous carbon layer; and 
 at least one amorphous carbon layer adhered to the chemical support layer. 
   
     
     
         10 . The conductive component coating, according to  claim 9 , characterized in that it comprises a diffusion layer on the surface of the conductive component. 
     
     
         11 . The conductive component coating, according to  claim 10 , characterized in that it comprises:
 at least one diffusion layer of 250 to 300 μm of thickness on the surface of the conductive component;   at least one mechanical support layer of 10 μm of thickness, composed of nitrides in direct contact with the surface of the conductive component;   at least one chemical support layer between the mechanical support layer and an amorphous carbon layer; and   at least one amorphous carbon layer.   
     
     
         12 . The conductive component coating, according to  claim 9 , characterized in that the chemical support layer is composed of silicon, carbon and hydrogen and having 1.2 μm of thickness.