Apparatus and method for real-time sensing of properties in industrial manufacturing equipment

Abstract

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

1 . An apparatus for real-time sensing of properties within industrial manufacturing equipment, comprising:
 first plural sensors mounted within a processing environment of a manufacturing system, each sensor being assigned to a different region to monitor at least one of a physical, chemical, or electrical property of the assigned region of the system; and   a reader system having componentry configured to simultaneously and wirelessly interrogate the first plural sensors using a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the at least one of a physical, chemical, or electrical property at each assigned region of the system,   wherein the first plural sensors are made operable in the first frequency band according to design rules that permit the simultaneous interrogation without collision between the response signals echoed from each sensor operating in the first frequency band,   wherein the processing environment includes a gas-phase plasma environment, and   wherein the first frequency band is defined to exclude harmonic frequencies of the plasma excitation frequency.   
     
     
         2 . The apparatus of  claim 1 , wherein the manufacturing system includes a semiconductor manufacturing system, or a non-semiconductor manufacturing system. 
     
     
         3 . The apparatus of  claim 2 , wherein the manufacturing system facilitates manufacturing of semiconductor devices, photonic devices, photo-emission devices, photo-absorption devices, or photo-detection devices. 
     
     
         4 . The apparatus of  claim 2 , wherein the manufacturing system facilitates manufacturing of metallic, semi-metallic, non-metallic, polymeric, plastic, ceramic, or glass or glass-like workpieces. 
     
     
         5 . The apparatus of  claim 1 , further comprising:
 a workpiece to be arranged within the processing environment of the manufacturing system, wherein the first plural sensors are mounted on the workpiece.   
     
     
         6 . The apparatus of  claim 1 , further comprising:
 multiple sensor groupings assigned to plural, uniquely defined frequency bands, the multiple sensor groupings including the first plural sensors assigned to the first frequency band.   
     
     
         7 . The apparatus of  claim 1 , wherein each sensor includes a surface acoustic wave (SAW) delay line device, and wherein the substrate includes LiNbO 3 , LiTaO 3 , or La 3 Ga 5 SiO 14 . 
     
     
         8 . The apparatus of  claim 1 , wherein the at least one of a physical or chemical property includes temperature or differential temperature. 
     
     
         9 . The apparatus of  claim 1 , wherein each sensor includes an inter-digitated transducer to excite and subsequently detect surface waves, and one or more reflector groups to diffract and reflect surface waves back towards the inter-digitated transducer, and wherein the one or more reflector groups are spaced apart a pre-determined distance along a wave propagation path from the inter-digitated transducer. 
     
     
         10 . The apparatus of  claim 9 , wherein the inter-digitated transducer is coupled to at least one antenna for receiving and transmitting signals between each sensor and the reader system. 
     
     
         11 . The apparatus of  claim 9 , wherein the one or more reflectors of each sensor are arranged to produce an impulse response signal in the time domain exhibiting a train of two or more distinct echo impulse responses. 
     
     
         12 . The apparatus of  claim 9 , wherein the one or more reflector groups are located on the same side of the inter-digitated transducer. 
     
     
         13 . An apparatus for real-time sensing of properties within industrial manufacturing equipment, comprising:
 first plural sensors mounted within a processing environment of a manufacturing system, each sensor being assigned to a different region to monitor at least one of a physical, chemical, or electrical property of the assigned region of the system; and   a reader system having componentry configured to simultaneously and wirelessly interrogate the first plural sensors using a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the at least one of a physical or chemical property at each assigned region of the system,   wherein the first plural sensors are made operable in the first frequency band according to design rules that permit the simultaneous interrogation without collision between the response signals echoed from each sensor operating in the first frequency band, and   wherein each sensor of the first plural sensors includes an inter-digitated transducer to excite and subsequently detect surface waves, and one or more reflector groups to diffract and reflect surface waves back towards the inter-digitated transducer, and wherein the one or more reflector groups are spaced apart a pre-determined distance along a wave propagation path from the inter-digitated transducer.   
     
     
         14 . The apparatus of  claim 13 , wherein the inter-digitated transducer is coupled to at least one antenna for receiving and transmitting signals between each sensor and the reader system. 
     
     
         15 . The apparatus of  claim 13 , wherein the one or more reflectors of each sensor are arranged to produce an impulse response signal in the time domain exhibiting a train of two or more distinct echo impulse responses. 
     
     
         16 . The apparatus of  claim 13 , wherein the one or more reflector groups are located on the same side of the inter-digitated transducer. 
     
     
         17 . An apparatus for real-time sensing of properties within industrial manufacturing equipment, comprising:
 first plural sensors mounted within a processing environment of a manufacturing system, each sensor being assigned to a different region to monitor at least one of a physical, chemical, or electrical property of the assigned region of the system; and   a reader system having componentry configured to simultaneously and wirelessly interrogate the first plural sensors using a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the at least one of a physical or chemical property at each assigned region of the system,   wherein the first plural sensors are made operable in the first frequency band according to design rules that permit the simultaneous interrogation without collision between the response signals echoed from each sensor operating in the first frequency band, and   wherein the single high frequency interrogation sequence includes interrogating sensors with a time-resolved excitation signal and processing received echo signals in the time domain, or interrogating sensors with a frequency modulated excitation signal and processing received echo signals in the frequency domain.   
     
     
         18 . An apparatus for real-time sensing of properties within industrial manufacturing equipment, comprising:
 first plural sensors mounted within a processing environment of a manufacturing system, each sensor being assigned to a different region to monitor at least one of a physical or chemical property of the assigned region of the system; and   a reader system having componentry configured to simultaneously and wirelessly interrogate the first plural sensors using a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the at least one of a physical or chemical property at each assigned region of the system,   wherein the first plural sensors are made operable in the first frequency band according to design rules that permit the simultaneous interrogation without collision between the response signals echoed from each sensor operating in the first frequency band, and   wherein a protective material covers the first plural sensors to insulate each sensor from the environment present in the industrial manufacturing system.   
     
     
         19 . The apparatus of  claim 18 , wherein the processing environment includes a gas-phase plasma environment. 
     
     
         20 . The apparatus of  claim 19 , wherein the first frequency band is defined to exclude harmonic frequencies of the plasma excitation frequency.