Display apparatus and method of manufacturing the same

Abstract

A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

What is claimed is: 
     
         1 . A display apparatus comprising:
 a substrate comprising a display area;   a first thin-film transistor disposed in the display area on the substrate, wherein the first thin-film transistor comprises a first active layer comprising polycrystalline silicon, a first gate electrode insulated from the first active layer, and a first electrode connected to the first active layer;   a second thin-film transistor disposed in the display area on the substrate, wherein the second thin-film transistor comprises a second active layer comprising an oxide semiconductor, a second gate electrode insulated from the second active layer, and a second electrode connected to the second active layer;   a first interlayer insulating layer disposed between the first gate electrode and the second active layer;   a second interlayer insulating layer disposed between the second gate electrode and the first electrode; and   a planarization layer disposed between the first electrode and the second electrode.   
     
     
         2 . The display apparatus of  claim 1 , wherein
 the substrate further comprises a bending area,   wherein the display apparatus further comprises:
 a first conductive layer disposed in the bending area at a level which is the same as a level of the first electrode; and 
 a second conductive layer disposed in the bending area at a level which is the same as a level of the second electrode.