Solid-state imaging element, manufacturing method, and electronic device

Abstract

A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed.

1 . A solid-state imaging device, comprising:
 a substrate;   a photoelectric conversion region in the substrate;   a pixel separating portion in the substrate;   a p-type region adjacent to the pixel separating portion in the substrate; and   a polysilicon within the pixel separating portion, wherein
 the polysilicon in the pixel separating portion is in a first region of the substrate, 
 the first region does not include a second region of the substrate, the second region includes a transfer transistor, and 
 the polysilicon is configured to receive a negative potential. 
   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the p-type region is adjacent to at least two sides of the photoelectric conversion region in a plan view of the solid-state imaging device. 
     
     
         3 . The solid-state imaging device according to  claim 1 , further comprising a contact portion in contact with the polysilicon. 
     
     
         4 . The solid-state imaging device according to  claim 1 , wherein the polysilicon is further configured to receive the negative potential based on transfer of charge by the transfer transistor from the photoelectric conversion region to a floating diffusion section. 
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein the p-type region comprises ions of P-type in an inclined direction with respect to a surface of the substrate. 
     
     
         6 . The solid-state imaging device according to  claim 1 , wherein a side surface of the p-type region is in contact with the pixel separating portion. 
     
     
         7 . The solid-state imaging device according to  claim 1 , further comprising a floating diffusion section in the substrate, wherein the floating diffusion section is spaced apart from the pixel separating portion. 
     
     
         8 . The solid-state imaging device according to  claim 1 , wherein the p-type region is between the pixel separating portion and a side surface of the photoelectric conversion region. 
     
     
         9 . The solid-state imaging device according to  claim 1 , wherein the pixel separating portion extends in the substrate from a light incident side surface of the substrate to a non-light incident side surface of the substrate. 
     
     
         10 . The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion region, the p-type region, and the pixel separating portion are in a depth direction of the substrate. 
     
     
         11 . The solid-state imaging device according to  claim 1 , wherein the p-type region is in contact with the photoelectric conversion region. 
     
     
         12 . An electronic device, comprising:
 a solid-state imaging device that includes:
 a substrate; 
 a photoelectric conversion region in the substrate; 
 a pixel separating portion in the substrate; 
 a p-type region adjacent to the pixel separating portion in the substrate; and 
 a polysilicon within the pixel separating portion, wherein
 the polysilicon in the pixel separating portion is in a first region of the substrate, 
 the first region does not include a second region of the substrate, 
 the second region includes a transfer transistor, and 
 the polysilicon is configured to receive a negative potential. 
 
   
     
     
         13 . The electronic device according to  claim 12 , wherein the p-type region is adjacent to at least two sides of the photoelectric conversion region in a plan view of the solid-state imaging device. 
     
     
         14 . The electronic device according to  claim 12 , further comprising a contact portion in contact with the polysilicon. 
     
     
         15 . The electronic device according to  claim 12 , wherein the polysilicon is further configured to receive the negative potential based on transfer of charge by the transfer transistor from the photoelectric conversion region to a floating diffusion section. 
     
     
         16 . The electronic device according to  claim 12 , wherein the p-type region comprises ions of P-type in an inclined direction with respect to a surface of the substrate. 
     
     
         17 . The electronic device according to  claim 12 , wherein a side surface of the p-type region is in contact with the pixel separating portion. 
     
     
         18 . The electronic device according to  claim 12 , wherein the p-type region is in contact with the photoelectric conversion region.