US2021335394A1PendingUtilityA1
Memory with non-volatile configurations for efficient power management and operation of the same
Est. expiryMar 23, 2038(~11.6 yrs left)· nominal 20-yr term from priority
G11C 16/20G11C 7/22G11C 5/14G11C 7/1051G11C 7/20G11C 2207/2227
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Claims
Abstract
A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A memory device, comprising:
a memory array; and circuitry configured to:
store one or more memory training settings for the memory array in a non-volatile memory location; and
in response to returning to a powered-on state from a reduced-power state, read the one or more memory training settings from the non-volatile memory location.
2 . The memory device of claim 1 , wherein the circuitry is further configured, in response to returning to the powered-on state from the reduced-power state, to read the one or more memory training settings from the non-volatile memory location without performing a memory training operation to determine the one or more memory training settings.
3 . The memory device of claim 1 , wherein the one or more memory training settings are configured to place a memory data strobe within a data eye for a given memory cycle of the memory array by establishing one or more programmable latencies for the memory array and adjusting one or more timings for the memory array.
4 . The memory device of claim 1 , wherein the one or more memory training settings include a read timing setting, a write timing setting, a CMD/CTL/ADDR timing setting, an ODT setting, a voltage setting, a latency setting, a ZQ calibration, an RCOMP resistance, or a combination thereof.
5 . The memory device of claim 1 , wherein the circuitry is further configured to cause the memory device to enter the reduced-power state in response to receiving a command from a connected host device.
6 . The memory device of claim 1 , wherein the circuitry is further configured to cause the memory device to enter the reduced-power state in response to a determination that the memory device is idle.
7 . The memory device of claim 1 , wherein the circuitry is further configured to cause the memory device to return to the powered-on state from the reduced-power state in response to receiving a command from a connected host device.
8 . The memory device of claim 1 , wherein the reduced-power state corresponds to a disconnection of at least a portion of the memory array from an applied voltage.
9 . The memory device of claim 1 , wherein a single semiconductor chip comprises the circuitry and the memory array.
10 . The memory device of claim 1 , wherein a first semiconductor chip comprises the circuitry and a second one or more semiconductor chips comprise the memory array.
11 . A method of operating a memory device including a memory array, the method comprising:
storing one or more memory training settings for the memory array in a non-volatile memory location; and in response to returning to a powered-on state from a reduced-power state, reading the one or more memory training settings from the non-volatile memory location.
12 . The method of claim 11 , further comprising:
in response to returning to the powered-on state from the reduced-power state, reading the one or more memory training settings from the non-volatile memory location without performing a memory training operation to determine the one or more memory training settings.
13 . The method of claim 11 , wherein the one or more memory training settings are configured to place a memory data strobe within a data eye for a given memory cycle of the memory array by establishing one or more programmable latencies for the memory array and adjusting one or more timings for the memory array.
14 . The method of claim 11 , wherein the one or more memory training settings include a read timing setting, a write timing setting, a CMD/CTL/ADDR timing setting, an ODT setting, a voltage setting, a latency setting, a ZQ calibration, an RCOMP resistance, or a combination thereof.
15 . The method of claim 11 , further comprising:
entering the reduced-power state in response to a determination that the memory device is idle.
16 . The method of claim 15 , further comprising:
returning to the powered-on state from the reduced-power state in response to receiving a command from a connected host device.
17 . A memory system, comprising:
a host device; and a memory device including a memory array operably coupled to the host device, the memory device configured to:
store one or more settings for the memory array in a non-volatile memory location; and
in response to returning to a powered-on state from a reduced-power state, read the one or more memory training settings from the non-volatile memory location.
18 . The memory system of claim 17 , wherein the memory device is further configured to, in response to returning to the powered-on state from the reduced-power state, communicate the one or more memory training settings to the host device after reading the one or more memory training settings from the non-volatile memory location.
19 . The memory system of claim 17 , wherein the memory device is further configured to enter the reduced-power state in response to receiving a command from the host device.
20 . The memory system of claim 17 , wherein the memory device is further configured to return to the powered-on state from the reduced-power state in response to receiving a command from the host device.Join the waitlist — get patent alerts
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