Semiconductor device, inspection apparatus of semiconductor device, and method for inspecting semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first transistor, and a first mounting member. The first transistor includes a nitride semiconductor layer and includes a first element electrode, a second element electrode, and a third element electrode. The first mounting member includes a first frame electrode, a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, a first pad electrode, and a first pad connection member electrically connecting the first element electrode and the first pad electrode.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first transistor including a nitride semiconductor layer and including a first element electrode, a second element electrode, and a third element electrode; and   a first mounting member,   the first mounting member including
 a first frame electrode, 
 a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, 
 a first pad electrode, and 
 a first pad connection member electrically connecting the first element electrode and the first pad electrode. 
   
     
     
         2 . The device according to  claim 1 , wherein
 the first mounting member further includes a mounting substrate,   the mounting substrate includes a first substrate surface facing the first transistor, and   the first frame electrode, the first pad electrode, and the first transistor are located on the first substrate surface.   
     
     
         3 . The device according to  claim 1 , wherein
 the first mounting member further includes a mounting substrate,   the mounting substrate includes a first substrate surface facing the first transistor,   a first direction is from the mounting substrate toward the first frame electrode, and   a position of the nitride semiconductor layer in the first direction is between a position of the first substrate surface in the first direction and a position of the first element electrode in the first direction, between a position of the first substrate surface in the first direction and a position of the second element electrode in the first direction, and between a position of the first substrate surface in the first direction and a position of the third element electrode in the first direction.   
     
     
         4 . The device according to  claim 1 , wherein
 the first mounting member further includes:
 a second frame electrode; 
 a plurality of second frame connection members electrically connecting the second element electrode and the second frame electrode; 
 a second pad electrode; and 
 a second pad connection member electrically connecting the second element electrode and the second pad electrode. 
   
     
     
         5 . The device according to  claim 4 , wherein
 the first mounting member further includes:
 a third pad electrode; and 
 a third pad connection member electrically connecting the third pad electrode and the first frame electrode, and 
   at least a portion of the first frame electrode is between the first pad electrode and the third pad electrode.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein
 the first mounting member further includes:
 a fourth pad electrode; and 
 a fourth pad connection member electrically connecting the fourth pad electrode and the second frame electrode, and 
   at least a portion of the second frame electrode is between the second pad electrode and the fourth pad electrode.   
     
     
         7 . The device according to  claim 1 , further comprising:
 a second transistor including a fourth element electrode, a fifth element electrode, and a sixth element electrode,   the fifth element electrode being electrically connected to the first frame electrode,   the first transistor being normally-on.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein
 the second transistor includes a silicon semiconductor layer, and   the second transistor is normally-off.   
     
     
         9 . The device according to  claim 7 , wherein
 the first mounting member further includes:
 a fifth pad electrode; and 
 a fifth pad connection member electrically connecting the fifth pad electrode and the fourth element electrode. 
   
     
     
         10 . The device according to  claim 7 , further comprising:
 a first diode including a first anode and a first cathode; and   a second diode including a second anode and a second cathode,   the first anode being electrically connected to the third element electrode,   the first cathode being electrically connected to the second anode,   the second cathode being electrically connected to the second element electrode.   
     
     
         11 . The device according to  claim 1 , wherein
 a number of the plurality of first frame connection members is not less than 20 and not more than 100.   
     
     
         12 . The device according to  claim 1 , wherein
 the plurality of first frame connection members includes at least one selected from the group consisting of Au and Cu.   
     
     
         13 . A semiconductor device, comprising:
 a first transistor including a nitride semiconductor layer and including a first element electrode, a second element electrode, and a third element electrode; and   a first mounting member,   the first mounting member including
 a plurality of first frame electrodes, 
 a plurality of first frame connection members electrically connecting the first element electrode and one of the plurality of first frame electrodes, and 
 an other plurality of first frame connection members electrically connecting the first element electrode and an other one of the plurality of first frame electrodes. 
   
     
     
         14 . The semiconductor device according to  claim 13 , wherein
 the one of the plurality of first frame electrodes is next to the other one of the plurality of first frame electrodes, and   a distance between the one of the plurality of first frame electrodes and the other one of the plurality of first frame electrodes is not less than 10 μm and not more than 80 μm.   
     
     
         15 . An inspection apparatus of a semiconductor device, comprising:
 a first probe;   a second probe;   a third probe;   a fourth probe; and   a controller electrically connected to the first, second, third, and fourth probes, the controller being configured to inspect the semiconductor device,   the semiconductor device including
 a first transistor including a nitride semiconductor layer and including a first element electrode, a second element electrode, and a third element electrode, and 
 a first mounting member, 
   the first mounting member including
 a first frame electrode, 
 a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, 
 a second frame electrode, 
 a second frame connection member electrically connecting the second element electrode and the second frame electrode, 
 a first pad electrode, and 
 a first pad connection member electrically connecting the first element electrode and the first pad electrode, 
   in a first inspection state, the first probe being electrically connected to a first portion of the first frame electrode, the second probe being electrically connected to the second frame electrode, the third probe being electrically connected to the first pad electrode, the fourth probe being electrically connected to a second portion of the first frame electrode,   the controller being configured to inspect at least a portion of the plurality of first frame connection members by detecting a potential difference between the third probe and the fourth probe when a current is supplied between the first probe and the second probe in the first inspection state.   
     
     
         16 . The apparatus of the semiconductor device according to  claim 15 , wherein
 the semiconductor device further includes a second transistor,   the second transistor includes a fourth element electrode, a fifth element electrode, and a sixth element electrode,   the fifth element electrode is electrically connected to the first frame electrode,   the first transistor is normally-on,   the first mounting member further includes
 a fifth pad electrode, 
 a fifth pad connection member electrically connecting the fifth pad electrode and the fourth element electrode, 
 a fifth frame electrode, and 
 a plurality of fifth frame connection members electrically connecting the fifth frame electrode and the fourth element electrode, 
   in a third inspection state, the first probe is electrically connected to a fifth portion of the fifth frame electrode, the second probe is electrically connected to the first pad electrode, the third probe is electrically connected to the fifth pad electrode, and the fourth probe is electrically connected to a sixth portion of the fifth frame electrode, and   the controller is configured to inspect at least a portion of the plurality of fifth frame connection members by detecting a current flowing between the first probe and the second probe when a current is supplied between the first probe and the second probe in the third inspection state.