Semiconductor device

Abstract

A method of manufacturing a semiconductor device includes the following steps. A first patterned photoresist layer is formed on a substrate. A second patterned photoresist layer is formed on the substrate after the first patterned photoresist layer is formed, wherein the first patterned photoresist layer and the second patterned photoresist layer are arranged alternatively. A liner is formed to cover sidewalls of the first patterned photoresist layer and the second patterned photoresist layer. The present invention also provides a semiconductor device, including a plurality of pillars being disposed on a layer, wherein the layer includes first recesses and second recesses, wherein the depths of the first recesses are less than the depths of the second recesses.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a plurality of pillars disposed on a layer, wherein the layer comprises first recesses and second recesses, wherein the depths of the first recesses are less than the depths of the second recesses.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein each of the pillars comprises a protruding part of the layer, a silicon nitride layer and an oxide layer stacked from bottom to top. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the layer comprises a tungsten silicon layer. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the first recesses and the second recesses are arranged alternatively. 
     
     
         5 . A semiconductor device, comprising:
 a plurality of hole structures disposed on a layer, wherein the layer comprises first holes and second holes, wherein the depths of the first holes are less than the depths of the second holes.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein a bottom of each of the hole structures exposes at least two different materials. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein the materials of the bottom of each of the hole structures comprise silicon, silicon oxide or/and silicon nitride.