US2021325583A1PendingUtilityA1

Silicon-germanium based optical filter

76
Assignee: VIAVI SOLUTIONS INCPriority: Nov 30, 2016Filed: Jun 21, 2021Published: Oct 21, 2021
Est. expiryNov 30, 2036(~10.3 yrs left)· nominal 20-yr term from priority
Inventors:Georg J. Ockenfuss
C23C 14/352C23C 14/081C23C 14/083C23C 14/0652C23C 14/10C23C 14/185C23C 14/14G02B 5/285G02B 5/281C23C 14/3464G02B 5/20C23C 14/06C23C 14/0057G02B 5/207C23C 14/5806G02B 1/113H01J 37/3426H01J 37/3417C23C 14/3407
76
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Claims

Abstract

An optical filter may include a substrate. An optical filter may include a set of optical filter layers disposed onto the substrate. The set of optical filter layers including a first subset of optical filter layers. The first subset of optical filter layers may include a silicon-germanium (SiGe) with a first refractive index. An optical filter may include a second subset of optical filter layers. The second subset of optical filter layers may include a material with a second refractive index. The second refractive index being less than the first refractive index.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A sputter deposition system, comprising:
 a first cathode;   a second cathode;   a first target,
 wherein the first target is oriented approximately parallel to a substrate, and 
 wherein the first cathode is configured to sputter a first material from the first target; and 
   a second target,
 wherein the second target is oriented approximately 120 degrees relative to the substrate, and 
 wherein the second cathode is configured to sputter a second material from the second target. 
   
     
     
         2 . The sputter deposition system of  claim 1 , wherein the first target is a silicon target. 
     
     
         3 . The sputter deposition system of  claim 1 , wherein the second target is a germanium target. 
     
     
         4 . The sputter deposition system of  claim 1 , wherein the first material is silicon. 
     
     
         5 . The sputter deposition system of  claim 1 , wherein the second material is germanium. 
     
     
         6 . The sputter deposition system of  claim 1 , wherein the first target is a germanium target. 
     
     
         7 . The sputter deposition system of  claim 1 , wherein the second target is a silicon target. 
     
     
         8 . The sputter deposition system of  claim 1 , further comprising:
 a plasma activation source (PAS) configured to introduce hydrogen gas into a vacuum chamber that includes the first cathode, the second cathode, the first target, and the second target.   
     
     
         9 . A sputter deposition system, comprising:
 a first cathode;   a second cathode;   a silicon target,
 wherein the first cathode is configured to sputter silicon from the silicon target onto a substrate; 
   a germanium target; and
 wherein the second cathode is configured to sputter germanium from the germanium target onto the substrate. 
   
     
     
         10 . The sputter deposition system of  claim 9 , wherein the silicon target is oriented at approximately 60 degrees relative to the substrate. 
     
     
         11 . The sputter deposition system of  claim 9 , wherein the germanium target is oriented at approximately 60 degrees relative to the substrate. 
     
     
         12 . The sputter deposition system of  claim 9 , further comprising:
 a plasma activation source (PAS) configured to introduce hydrogen gas into a chamber that includes the first cathode and the second cathode.   
     
     
         13 . The sputter deposition system of  claim 12 , wherein the chamber is a vacuum chamber. 
     
     
         14 . A sputter deposition system, comprising:
 a substrate; and   a target that includes silicon-germanium material,
 wherein the target is configured to be sputtered in presence of hydrogen to deposit a hydrogenated silicon-germanium material as a layer on the substrate. 
   
     
     
         15 . The sputter deposition system of  claim 14 , wherein the target is configured to be sputtered in presence of the hydrogen and an inert gas. 
     
     
         16 . The sputter deposition system of  claim 15 , wherein the inert gas is argon. 
     
     
         17 . The sputter deposition system of  claim 14 , further comprising:
 a cathode,
 wherein an angle of the cathode causes a particular concentration of silicon-germanium to be sputtered onto the substrate. 
   
     
     
         18 . The sputter deposition system of  claim 14 , further comprising:
 a plasma activation source (PAS) configured to introduce the hydrogen.   
     
     
         19 . The sputter deposition system of  claim 14 , wherein the substrate and the target are in a vacuum chamber. 
     
     
         20 . The sputter deposition system of  claim 14 , wherein the hydrogenated silicon-germanium material is deposited at a deposition rate of approximately 0.05 nanometers (nm)/second(s) to approximately 2.0 nm/s.

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