Layer forming method

Abstract

There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.

What is claimed is: 
     
         1 . A method of forming a layer, comprising:
 providing a substrate with gaps created during manufacturing of a feature;   depositing a seed layer on the substrate; and   depositing a bulk layer directly after the step of depositing the seed layer,   wherein depositing the seed layer comprises:
 supplying a first precursor comprising metal and halogen atoms to the substrate; and 
 supplying a first reactant to the substrate, wherein a portion of the first precursor and the first reactant react to form at least a portion of the seed layer; 
   wherein depositing the bulk layer comprises:
 supplying a second precursor comprising metal and halogen atoms to the seed layer; and, 
 supplying a second reactant to the seed layer, wherein the second precursor and the second reactant react to form the bulk layer on the seed layer; and 
   wherein the second precursor is molybdenum(VI) dichloride dioxide (MoO 2 Cl 2 ).   
     
     
         2 . The method according to  claim 1 , wherein at least one of the first and second reactants comprises a silane. 
     
     
         3 . The method according to  claim 1 , wherein at least one of the first and second reactant comprises hydrogen (H 2 ). 
     
     
         4 . The method according to  claim 1 , wherein the first and second precursor are different. 
     
     
         5 . The method according to  claim 1 , wherein the first precursor and the second precursor comprise the same metal atom. 
     
     
         6 . The method according to  claim 1 , wherein the first and second precursor comprise the same halogen atom. 
     
     
         7 . The method according to  claim 1 , wherein the first precursor comprises molybdenum pentachloride (MoCl 5 ). 
     
     
         8 . The method according to  claim 1 , wherein the gaps of the substrate comprise at least one horizontal gap, parallel to a top surface of the substrate, such that the seed layer is deposited in the at least one horizontal gap and the bulk layer is deposited in the at least one horizontal gap. 
     
     
         9 . The method according to  claim 8 , wherein the gaps of the substrate further comprise at least one vertical gap, perpendicular to the at least one horizontal gap, such that the seed layer is also deposited in the at least one vertical gap and the bulk layer is also deposited in the at least one vertical gap. 
     
     
         10 . The method according to  claim 1 , wherein depositing of the seed layer comprises repeating an atomic layer deposition (ALD) cycle comprising sequentially supplying the first precursor to the substrate; and supplying the first reactant to the substrate. 
     
     
         11 . The method according to  claim 10 , wherein for depositing the seed layer a pretreatment ALD cycle is repeated between 100 and 1000 times and for depositing the bulk layer the bulk ALD cycle is repeated between 200 and 2000 times. 
     
     
         12 . A method of forming a layer, comprising:
 providing a substrate with gaps created during manufacturing of a feature;   depositing a seed layer on the substrate; and   depositing a bulk layer directly after the step of depositing the seed layer, wherein depositing the seed layer comprises:   supplying a first precursor comprising metal and halogen atoms to the substrate; and   supplying a first reactant to the substrate, wherein a portion of the first precursor and the first reactant react to form at least a portion of the seed layer;   
       wherein depositing the bulk layer comprises:
 supplying a second precursor comprising metal and halogen atoms to the seed layer; and, 
 supplying a second reactant to the seed layer, wherein the second precursor and the second reactant react to form the bulk layer on the seed layer; 
 wherein the first and second precursor are different; and 
 wherein the first precursor comprises molybdenum pentachloride (MoCl 5 ) and a portion of the second precursor that reacts with the second reactant to form the bulk layer is molybdenum(VI) dichloride dioxide (MoO 2 Cl 2 ). 
 
     
     
         13 . The method according to  claim 12 , wherein at least one of the first and second reactants comprises a silane. 
     
     
         14 . The method according to  claim 12 , wherein at least one of the first and second reactant comprises hydrogen (H 2 ). 
     
     
         15 . The method according to  claim 12 , wherein the gaps of the substrate comprise at least one horizontal gap, parallel to a top surface of the substrate, such that the seed layer is deposited in the at least one horizontal gap and the bulk layer is deposited in the at least one horizontal gap. 
     
     
         16 . The method according to  claim 15 , wherein the gaps of the substrate further comprise at least one vertical gap, perpendicular to the at least one horizontal gap, such that the seed layer is also deposited in the at least one vertical gap and the bulk layer is also deposited in the at least one vertical gap. 
     
     
         17 . The method according to  claim 12 , wherein depositing of the seed layer comprises repeating an atomic layer deposition (ALD) cycle comprising sequentially supplying the first precursor to the substrate; and supplying the first reactant to the substrate. 
     
     
         18 . The method according to  claim 17 , wherein for depositing the seed layer a pretreatment ALD cycle is repeated between 100 and 1000 times. 
     
     
         19 . The method according to  claim 18 , wherein for depositing the bulk layer, the bulk ALD cycle is repeated between 200 and 2000 times. 
     
     
         20 . The method according to  claim 12 , wherein at least one of the first and second precursor is supplied with pulses into a reaction chamber and the pulses are between 0.1 and 10 seconds in duration.