Vapor phase growth method

Abstract

Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

1 . A vapor phase growth method comprising:
 loading a first substrate into a reaction chamber;   generating a first mixed gas by mixing at least a gallium containing gas and a nitrogen-compound containing gas;   forming a first gallium-containing nitride film after the loading the first substrate by supplying the first mixed gas from a shower plate provided above the reaction chamber, a first surface of the first substrate and the shower plate being separated by 3 cm or more, the first substrate being rotated at a first rotation speed of 300 rpm or more;   generating a second mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas; and   forming a first indium aluminum nitride film after the forming the first gallium-containing nitride film by supplying the second mixed gas from the shower plate, the first substrate being rotated at a second rotation speed of 300 rpm or more, and the forming the first indium aluminum nitride film being continuously conducted without unloading the first substrate from the reaction chamber after the forming the first gallium-containing nitride film.   
     
     
         2 . The vapor phase growth method according to  claim 1 , wherein the reaction chamber is a reaction chamber for single wafer processing, and a rotation of the first substrate is self-rotation. 
     
     
         3 . (canceled) 
     
     
         4 . The vapor phase growth method according to claim  1 , wherein the second rotation speed is higher than the first rotation speed. 
     
     
         5 . The vapor phase growth method according to  claim 1 , further comprising:
 forming an aluminum nitride film or an aluminum gallium nitride film having a thickness smaller than the thickness of the first indium aluminum nitride film after the forming the first gallium-containing nitride film and before the forming the first indium aluminum nitride.   
     
     
         6 . The vapor phase growth method according to  claim 1 , further comprising:
 unloading the first substrate from the reaction chamber after forming the first indium aluminum nitride film;   loading a second substrate into the reaction chamber without cleaning the reaction chamber;   forming a second gallium-containing nitride film after the loading the second substrate by supplying the first mixed gas from the shower plate, the second substrate being rotated at the first rotation speed; and   forming a second indium aluminum nitride film after the forming the second gallium-containing nitride film by supplying the second mixed gas from the shower plate, the second substrate being rotated at the second rotation speed.   
     
     
         7 . The vapor phase growth method according to  claim 1 , wherein the nitrogen compound is ammonia. 
     
     
         8 . The vapor phase growth method according to  claim 1 , wherein the first substrate is a silicon substrate. 
     
     
         9 . The vapor phase growth method according to  claim 4 , wherein the second rotation speed is 1,600 rpm or more and the first rotation speed is 1,500 rpm or less. 
     
     
         10 . The vapor phase growth method according to  claim 5 , wherein the aluminum nitride film or the aluminum gallium nitride film has a film thickness of 0.1 nm or more and 5 nm or less. 
     
     
         11 . The vapor phase growth method according to  claim 1 , wherein the shower plate includes a plurality of gas ejection holes, and an interval between the gas ejection holes closest to each other is 1 mm or more and 15 mm or less. 
     
     
         12 . The vapor phase growth method according to  claim 1 , wherein the shower plate has uneven portion on a gas ejection surface. 
     
     
         13 . The vapor phase growth method according to  claim 12 , wherein an angle between a surface of the uneven portion and a horizontal direction of the gas ejection surface is 45 degrees or less.