Semiconductor device

Abstract

Provided is a semiconductor device including: a substrate containing a semiconductor material; an electrode provided on a substrate surface of the substrate, the electrode containing a metal material; and a mixed member provided on the substrate surface to be in contact with the electrode, the mixed member containing the semiconductor material and the metal material, in which a portion of the substrate surface is exposed at an end of the substrate.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate containing a semiconductor material;   an electrode provided on a substrate surface of the substrate, the electrode containing a metal material; and   a mixed member provided on the substrate surface to be in contact with the electrode, the mixed member containing the semiconductor material and the metal material,   wherein a portion of the substrate surface is exposed at an end of the substrate.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein an end of an upper surface of the electrode has a chamfered portion in a plane perpendicular to the substrate surface. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the mixed member has a triangular shape having a side in contact with a side surface of the electrode and a side in contact with the substrate surface in a plane perpendicular to the substrate surface. 
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the electrode has a rectangular shape in a plane perpendicular to the substrate surface,   wherein the mixed member has a rectangular shape in a plane perpendicular to the substrate surface,   wherein a height of the mixed member is smaller than a height of the electrode, and   wherein a length of the electrode parallel to the substrate surface is larger than a length of the mixed member parallel to the substrate surface.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein the electrode and the mixed member have a step shape provided on an upper surface of the mixed member or an upper surface of the electrode. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the mixed member is provided around the electrode on the substrate surface. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the semiconductor material is silicon. 
     
     
         8 . The semiconductor device according to  claim 7 , wherein the mixed member does not contain silicide. 
     
     
         9 . The semiconductor device according to  claim 7 , wherein the mixed member contains silicide. 
     
     
         10 . A semiconductor device comprising:
 a substrate containing a semiconductor material;   an electrode provided on a substrate surface of the substrate, the electrode containing a metal material; and   a mixed member provided on the substrate surface to be in contact with the electrode, the mixed member containing the semiconductor material and the metal material,   wherein an end of an upper surface of the electrode has a chamfered portion in a plane perpendicular to the substrate surface, and   wherein the mixed member has a triangular shape having a side in contact with a side surface of the electrode and a side in contact with the substrate surface in a plane perpendicular to the substrate surface.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein the mixed member is provided around the electrode on the substrate surface. 
     
     
         12 . The semiconductor device according to  claim 10 , wherein the semiconductor material is silicon. 
     
     
         13 . The semiconductor device according to  claim 12 , wherein the mixed member does not contain silicide. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein the mixed member contains silicide.