Semiconductor package structure for improving die warpage and manufacturing method thereof

Abstract

A semiconductor die package includes a semiconductor die, a film for improving die warpage bonded to a first face of the semiconductor die, a plurality of electrically conductive bumps formed on a second face of the semiconductor die, a substrate onto which the electrically conductive bumps of the second face of the semiconductor die are bonded to electrically connect the semiconductor die and the substrate, and a mold compound applied these components to form an exposed surface of the semiconductor die package that is coplanar with an exposed surface of the film.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor device, comprising:
 a substrate comprising a substrate top side;   a semiconductor die comprising a die top side, a die bottom side, and a die lateral side joining the die top side to the die bottom side;   conductive bumps that couple the die bottom side to the substrate top side;   an adhesive layer comprising an adhesive top side and an adhesive bottom side opposite the adhesive top side, wherein the adhesive bottom side covers the die top side;   interconnects on the substrate top side, wherein each interconnect has a horizontal line of symmetry; and   a mold compound comprising a mold top side and a mold bottom side opposite the mold top side;   wherein the mold compound:
 contacts the substrate top side; 
 encompasses the interconnects; and 
 does not cover a portion of a top side of each interconnect. 
   
     
     
         22 . The semiconductor device of  claim 21 , wherein the mold compound does not cover the adhesive top side. 
     
     
         23 . The semiconductor device of  claim 22 , wherein:
 the adhesive layer comprises an adhesive lateral side joining the adhesive top side to the adhesive bottom side; and   the mold compound contacts the adhesive lateral side.   
     
     
         24 . The semiconductor device of  claim 23 , wherein the adhesive lateral side extends between the die top side and the mold top side. 
     
     
         25 . The semiconductor device of  claim 21 , wherein a portion of the mold top side is coplanar with the adhesive top side. 
     
     
         26 . The semiconductor device of  claim 21 , wherein the substrate further comprises a substrate bottom side that defines an external bottom side of the semiconductor device. 
     
     
         27 . The semiconductor device of  claim 21 , wherein the top side of each interconnect does not extend beyond the mold top side. 
     
     
         28 . The semiconductor device of  claim 27 , wherein a height of the top side of each interconnect above the substrate top side is less than a height of the die top side above the substrate top side. 
     
     
         29 . The semiconductor device of  claim 21 , wherein the mold compound conforms to portions of the interconnects. 
     
     
         30 . A semiconductor device, comprising:
 a substrate comprising a substrate top side;   a semiconductor die comprising a die top side, a die bottom side, and a die lateral side joining the die top side to the die bottom side;   conductive elements that bond and interconnect the die bottom side to the substrate top side;   an adhesive layer comprising an adhesive top side, an adhesive bottom side, and an adhesive lateral side joining the adhesive top side to the adhesive bottom side, wherein the adhesive bottom side covers the die top side;   interconnects on the substrate top side, wherein each interconnect has a horizontal line of symmetry; and   a mold compound that:
 contacts the substrate top side and the adhesive lateral side; and 
 encompasses the interconnects such that a portion of a top side of each interconnect is exposed through a mold top side of the mold compound. 
   
     
     
         31 . The semiconductor device of  claim 30 , wherein the die bottom side comprises circuit elements connected to the conductive elements. 
     
     
         32 . The semiconductor device of  claim 30 , wherein the adhesive top side is exposed through the mold top side. 
     
     
         33 . The semiconductor device of  claim 30 , wherein the substrate further comprises a substrate bottom side that defines an external bottom side of the semiconductor device. 
     
     
         34 . The semiconductor device of  claim 30 , wherein the top side of each interconnect does not extend beyond the mold top side. 
     
     
         35 . The semiconductor device of  claim 30 , wherein a height of the top side of each interconnect above the substrate top side is less than a height of the die top side above the substrate top side. 
     
     
         36 . A semiconductor device, comprising:
 a substrate comprising a substrate top side;   a semiconductor die comprising a die top side, a die bottom side, and a die lateral side joining the die top side to the die bottom side;   conductive elements on the die bottom side that:
 bond the die bottom side to the substrate top side; and 
 couple circuitry of the semiconductor die to the substrate; 
   an adhesive layer covering the die top side, wherein the adhesive layer comprises an adhesive top side, an adhesive bottom side, and an adhesive lateral side joining the adhesive top side to the adhesive bottom side;   an interconnect comprising an interconnect top side and an interconnect bottom side, wherein the interconnect bottom side is coupled to the substrate top side, and wherein the interconnect has a horizontal line of symmetry; and   a mold compound comprising a mold top side and a mold bottom side, wherein the mold compound:
 contacts the substrate top side; 
 contacts and covers the adhesive lateral side; 
 conforms with a portion of the interconnect; and 
 does not cover the interconnect top side. 
   
     
     
         37 . The semiconductor device of  claim 36 , wherein:
 the adhesive top side provides a single planar side; and   the mold top side is coplanar with the single planar side of the adhesive top side.   
     
     
         38 . The semiconductor device of  claim 36 , wherein the substrate comprises a substrate bottom side that defines an external bottom side of the semiconductor device. 
     
     
         39 . The semiconductor device of  claim 36 , wherein the adhesive lateral side extends from the mold top side to at least the die top side. 
     
     
         40 . The semiconductor device of  claim 36 , wherein a distance between the interconnect top side and the substrate top side is less than a distance between the die top side and the substrate top side.