US2021294212A1PendingUtilityA1
Photoresist composition and method of forming photoresist pattern
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Nov 14, 2017Filed: Jun 7, 2021Published: Sep 23, 2021
Est. expiryNov 14, 2037(~11.3 yrs left)· nominal 20-yr term from priority
G03F 7/0043G03F 7/11G03F 7/2002G03F 7/0046G03F 7/162G03F 7/38G03F 7/0042
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Claims
Abstract
A photoresist composition, comprising: a first polymer having one or more acid labile groups; a second polymer having fluorocarbon pendant groups; and metal oxide nanoparticles. The fluorocarbon pendant groups are attached to a main chain of the second polymer via a linking unit R1 of at least one selected from the group consisting of 1-9 carbon unbranched, branched, cyclic, noncylic, saturated, or unsaturated hydrocarbon with optional halogen substituents; —S—; —P—; —P(O2); —C(═O)S—; —C(═O)O—; —O—; —N—; —C(═O)N—; —SO2O—; —SO2S—; —SO—; —SO2—; and —C(═O)—.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A photoresist composition, comprising:
a first polymer having one or more acid labile groups; a second polymer having fluorocarbon pendant groups; and metal oxide nanoparticles, wherein the fluorocarbon pendant groups are attached to a main chain of the second polymer via a linking unit R1 of at least one selected from the group consisting of 1-9 carbon unbranched, branched, cyclic, noncylic, saturated, or unsaturated hydrocarbon with optional halogen substituents; —S—; —P—; —P(O 2 ); —C(═O)S—; —C(═O)O—; —O—; —N—; —C(═O)N—; —SO 2 O—; —SO 2 S—; —SO—; —SO 2 —; and —C(═O)—.
2 . The photoresist composition of claim 1 , wherein a layer of the second polymer has a thickness ranging from 0.1 nm to 20 nm.
3 . The photoresist composition of claim 1 , wherein a contact angle of a layer of the second polymer to water is greater than 75°.
4 . The photoresist composition of claim 1 , wherein the second polymer comprises from 0.1 wt. % to 10 wt. % of the fluorocarbon pendant groups based on a total weight of the second polymer.
5 . The photoresist composition of claim 1 , wherein the fluorocarbon pendant groups are selected from the group consisting of C x F y and —(C(CF 3 ) 2 OH)—, where 1≤x≤9 and 3≤y≤12.
6 . The photoresist composition of claim 1 , wherein a main chain of the second polymer is a polyhydroxystyrene, a polyacrylate, or a polymer formed from a 1 to 10 carbon monomer.
7 . A photoresist composition, comprising:
a photoresist polymer having one or more leaving groups selected from the group consisting of a carboxylic acid group, a phenolic alcohol group, a sulfonic group, a sulfonamide group, a sulfonylimido group, an (alkylsulfonyl) (alkylcarbonyl)methylene group, an (alkylsulfonyl)(alkyl-carbonyl)imido group, a bis(alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imido group, a bis(alkylsylfonyl)methylene group, a bis(alkylsulfonyl)imido group, a tris(alkylcarbonyl methylene group, and a tris(alkylsulfonyl)methylene group; a protective polymer having fluorocarbon pendant groups; and one or more photoactive compounds.
8 . The photoresist composition of claim 7 , wherein the fluorocarbon pendant groups are selected from the group consisting of C x F y and —(C(CF 3 ) 2 OH)—, where 1≤x≤9 and 3≤y≤12.
9 . The photoresist composition of claim 7 , wherein a main chain of the protective polymer is a polyhydroxystyrene, a polyacrylate, or a polymer formed from a 1 to 10 carbon monomer.
10 . The photoresist composition of claim 7 , wherein the protective polymer comprises from 0.1 wt. % to 10 wt. % of the fluorocarbon pendant groups based on a total weight of the second polymer.
11 . The photoresist composition of claim 7 , wherein the protective polymer has a weight average molecular weight of 3000 to 15,000.
12 . The photoresist composition of claim 7 , wherein the protective polymer comprises from 0.1 wt. % to 10 wt. % of one or more polar functional groups selected from the group consisting of —OH, —NH 3 , —NH 2 , and —SO 3 based on a total weight of the second polymer.
13 . A photoresist composition, comprising:
a photoresist material including a first polymer; and a second polymer having fluorocarbon pendant groups, wherein the fluorocarbon pendant groups are selected from the group consisting of C x F y and —(C(CF 3 ) 2 OH)—, where 1≤x≤9 and 3≤y≤12.
14 . The photoresist composition of claim 13 , wherein the photoresist material comprises metal oxide nanoparticles.
15 . The photoresist composition of claim 13 , wherein a main chain of the second polymer is a polyhydroxystyrene, a polyacrylate, or a polymer formed from a 1 to 10 carbon monomer.
16 . The photoresist composition of claim 13 , wherein the second polymer comprises from 0.1 wt. % to 10 wt. % of one or more polar functional groups selected from the group consisting of —OH, —NH 3 , —NH 2 , and —SO 3 based on a total weight of the second polymer.
17 . The photoresist composition of claim 13 , wherein the second polymer comprises from 0.1 wt. % to 10 wt. % of the fluorocarbon pendant groups based on a total weight of the second polymer.
18 . The photoresist composition of claim 13 , wherein the fluorocarbon pendant groups are attached to a polymer main chain via a linking unit of at least one selected from the group consisting of 1-9 carbon unbranched, branched, cyclic, noncylic, saturated, or unsaturated hydrocarbon with optional halogen substituents; —S—; —P—; —P(O 2 ); —C(═O)S—; —C(═O)O—; —O—; —N—; —C(═O)N—; —SO 2 O—; —SO 2 S—; —SO—; —SO 2 —; and —C(═O)—.
19 . The photoresist composition of claim 13 , wherein the C x F y is one or more selected from the group consisting of —C 2 F 5 , —CH 2 CH 2 C 3 F 7 , —(C(CF 3 ) 2 OH), —C(═O)OC 4 F 9 , —CH 2 OC 4 F 9 , and —C(═O)O(C(CF 3 ) 2 OH).
20 . The photoresist composition of claim 13 , wherein the second polymer has a weight average molecular weight of 3000 to 15,000.Join the waitlist — get patent alerts
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