Substrate processing apparatus

Abstract

Described herein is a technique capable of forming a film so as to fill a recess of a substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table on which a substrate is placed; an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table, wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.

1 . A substrate processing apparatus comprising:
 a substrate mounting table on which a substrate is placed;   an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and   a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table,   wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.   
     
     
         2 . The substrate processing apparatus of  claim 1 , further comprising
 first inert gas suppliers provided on both sides of the adsorption inhibiting gas supplier and configured to supply an inert gas onto the surface of the substrate from above the substrate mounting table,   wherein a distance P1 between a gas supply port provided in the first inert gas suppliers and the substrate is smaller than the distance D1.   
     
     
         3 . The substrate processing apparatus of  claim 1 , further comprising
 second inert gas suppliers provided on both sides of the source gas supplier and configured to supply an inert gas onto the surface of the substrate from above the substrate mounting table,   wherein a distance P2 between a gas supply port provided in the second inert gas suppliers and the substrate is smaller than the distance D2.   
     
     
         4 . The substrate processing apparatus of  claim 2 , further comprising
 second inert gas suppliers provided on both sides of the source gas supplier and configured to supply the inert gas onto the surface of the substrate from above the substrate mounting table,   wherein a distance P2 between a gas supply port provided in the second inert gas suppliers and the substrate is smaller than the distance D2.   
     
     
         5 . The substrate processing apparatus of  claim 1 , further comprising
 an elevator configured to elevate or lower the adsorption inhibiting gas supplier to change the distance D1.   
     
     
         6 . The substrate processing apparatus of  claim 2 , further comprising
 an elevator configured to elevate or lower the adsorption inhibiting gas supplier to change the distance D1.   
     
     
         7 . The substrate processing apparatus of  claim 3 , further comprising
 an elevator configured to elevate or lower the adsorption inhibiting gas supplier to change the distance D1.   
     
     
         8 . The substrate processing apparatus of  claim 4 , further comprising
 an elevator configured to elevate or lower the adsorption inhibiting gas supplier to change the distance D1.   
     
     
         9 . The substrate processing apparatus of  claim 5 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a film-forming process in which a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and control the elevator to reduce or increase the distance D1 while the film-forming process is being performed.   
     
     
         10 . The substrate processing apparatus of  claim 6 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a film-forming process in which a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and control the elevator to reduce or increase the distance D1 while the film-forming process is being performed.   
     
     
         11 . The substrate processing apparatus of  claim 6 , further comprising
 a controller configured to control the elevator to adjust the distance D1 in accordance with a depth of a recess formed on the surface of the substrate or a width of an opening of the recess.   
     
     
         12 . The substrate processing apparatus of  claim 7 , further comprising
 a controller configured to control the elevator to adjust the distance D1 in accordance with a depth of a recess formed on the surface of the substrate or a width of an opening of the recess.   
     
     
         13 . The substrate processing apparatus of  claim 1 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition.   
     
     
         14 . The substrate processing apparatus of  claim 2 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition.   
     
     
         15 . The substrate processing apparatus of  claim 3 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; to stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition.   
     
     
         16 . The substrate processing apparatus of  claim 5 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition.   
     
     
         17 . The substrate processing apparatus of  claim 9 , wherein the controller is further configured to control the adsorption inhibiting gas supplier and the source gas supplier to stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition. 
     
     
         18 . The substrate processing apparatus of  claim 11 , further comprising
 a controller configured to: control the adsorption inhibiting gas supplier and the source gas supplier to perform a cycle comprising (a) supplying the adsorption inhibiting gas to the substrate with a recess formed on the surface thereof and (b) supplying the source gas to the substrate is performed a predetermined number of times; and stop a supply of the adsorption inhibiting gas but continue a supply of the source gas when the recess is filled to meet a predetermined condition.   
     
     
         19 . The substrate processing apparatus of  claim 13 , wherein the controller is further configured to control the adsorption inhibiting gas supplier to supply an inert gas through the adsorption inhibiting gas supplier when the supply of the adsorption inhibiting gas is stopped but the supply of the source gas is continued. 
     
     
         20 . The substrate processing apparatus of  claim 15 , wherein the controller is further configured to control the adsorption inhibiting gas supplier to supply an inert gas through the adsorption inhibiting gas supplier when the supply of the adsorption inhibiting gas is stopped but the supply of the source gas is continued.