Semiconductor package and method of making

Abstract

A semiconductor package includes a substrate. The semiconductor package further includes a plurality of metal pillars on a top surface of the substrate. The semiconductor package further includes a semiconductor component on the substrate, wherein the semiconductor component includes one or more dies, and the semiconductor component has a top surface. The semiconductor package further includes a mold compound encapsulating the plurality of metal pillars and the semiconductor component, wherein the mold compound has a top surface above the top surface of the semiconductor component. The semiconductor package further includes an interposer coupled to the plurality of metal pillars.

What is claimed is: 
     
         1 . A semiconductor package comprising:
 a substrate;   a plurality of metal pillars on a top surface of the substrate;   a semiconductor component on the substrate, wherein the semiconductor component comprises one or more dies, and the semiconductor component has a top surface;   a mold compound encapsulating the plurality of metal pillars and the semiconductor component, wherein the mold compound has a top surface above the top surface of the semiconductor component; and   an interposer coupled to the plurality of metal pillars.   
     
     
         2 . The semiconductor package of  claim 1 , wherein each of the plurality of metal pillars includes a solder cap. 
     
     
         3 . The semiconductor package of  claim 2 , wherein a top surface of the solder cap is co-planar with the top surface of the mold compound. 
     
     
         4 . The semiconductor package of  claim 1 , wherein a height of each of the plurality of metal pillars ranges from about 10 microns μm to about 600 μm. 
     
     
         5 . The semiconductor package of  claim 1 , further comprising an interconnect between the semiconductor component and the substrate. 
     
     
         6 . The semiconductor package of  claim 1 , wherein a thickness of the mold compound is greater than a height of a metal pillar of the plurality of metal pillars. 
     
     
         7 . The semiconductor package of  claim 1 , wherein the mold compound directly contacts the semiconductor component. 
     
     
         8 . The semiconductor package of  claim 1 , wherein the mold compound directly contacts each of the plurality of metal pillars. 
     
     
         9 . A semiconductor package comprising:
 a substrate;   a plurality of metal pillars on a top surface of the substrate;   a semiconductor component on the substrate, wherein the semiconductor component comprises one or more dies, and the semiconductor component has a first height;   a mold compound encapsulating the plurality of metal pillars and the semiconductor component, wherein the mold compound has a second height greater than the first height;   an interposer coupled to the plurality of metal pillars; and   a first plurality of solder balls on a bottom surface of the substrate.   
     
     
         10 . The semiconductor package of  claim 9 , wherein each of the plurality of metal pillars as the second height. 
     
     
         11 . The semiconductor package of  claim 9 , wherein each of the plurality of metal pillars includes a solder cap. 
     
     
         12 . The semiconductor package of  claim 9 , further comprising an interconnect between the semiconductor component and the substrate. 
     
     
         13 . The semiconductor package of  claim 9 , wherein the plurality of metal pillars is between the substrate and the interposer. 
     
     
         14 . The semiconductor package of  claim 9 , further comprising a second plurality of solder balls on an opposite side of the interposer from the plurality of metal pillars. 
     
     
         15 . The semiconductor package of  claim 9 , wherein the mold compound directly contacts the semiconductor component. 
     
     
         16 . A method of making a semiconductor package, the method comprising:
 forming a plurality of metal pillars on a top surface of a substrate;   attaching a semiconductor component to the substrate, wherein the semiconductor component comprises one or more dies;   depositing a mold compound, wherein the mold compound encapsulates the plurality of metal pillars and the semiconductor component, and the mold compound is thicker than the semiconductor component;   attaching an interposer to the plurality of metal pillars; and   forming a plurality of solder balls on a bottom surface of the substrate.   
     
     
         17 . The method of  claim 16 , wherein depositing the mold compound comprises depositing the mold compound above a top surface of the semiconductor component. 
     
     
         18 . The method of  claim 16 , wherein forming the plurality of metal pillars comprises forming the plurality of metal pillars including a solder cap. 
     
     
         19 . The method of  claim 16 , wherein attaching the interposer comprises attaching the interposer to a surface of the plurality of metal pillars opposite the substrate. 
     
     
         20 . The method of  claim 16 , wherein attaching the semiconductor component to the substrate comprises attaching the semiconductor component to an interconnect structure on the top surface of the substrate.