Method for Producing an Output Coupling Element for an Optoelectronic Component and Optoelectronic Component

Abstract

A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element is rotatable in the chamber, providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element thereby producing a roughening in the surface.

1 . A method for producing an output coupling element for an optoelectronic component, the method comprising:
 providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element is rotatable in the chamber;   providing a structuring agent comprising water and ozone; and   introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element thereby producing a roughening in the surface.   
     
     
         2 . The method according to  claim 1 , wherein the inorganic dielectric element is formed of an oxide or a nitride of a metal. 
     
     
         3 . The method according to  claim 1 , wherein a mean roughness (Rq) after roughening is between 20 and 30 nm, inclusive. 
     
     
         4 . The method according to  claim 1 , wherein the structuring agent further comprises a base. 
     
     
         5 . The method according to  claim 4 , wherein the base is ammonia. 
     
     
         6 . The method according to  claim 5 , wherein a concentration of the ammonia is less than or equal to 0.05%. 
     
     
         7 . The method according to  claim 1 , wherein the ozone is introduced into the chamber in gaseous form. 
     
     
         8 . The method according to  claim 1 , wherein a concentration of the ozone is between 180 g/m3 to 250 g/m3. 
     
     
         9 . The method according to  claim 1 , wherein the water is deionized. 
     
     
         10 . The method according to  claim 1 , wherein the structuring agent comprises a temperature between room temperature and 90° C., inclusive. 
     
     
         11 . The method according to  claim 1 , wherein the chamber and/or the inorganic dielectric element has a rotational speed of 5 rpm to 1200 rpm, inclusive. 
     
     
         12 . The method according to  claim 1 , wherein the inorganic dielectric element is formed as a layer with a layer thickness between 20 nm and 150 nm, inclusive. 
     
     
         13 . The method according to  claim 1 , wherein the inorganic dielectric element is treated with the structuring agent between 5 minutes and 20 minutes, inclusive. 
     
     
         14 . An optoelectronic component comprising:
 a semiconductor layer sequence configured to emit radiation; and   an output coupling element comprising at least one inorganic dielectric element with a surface,   wherein the inorganic dielectric element comprises a mean roughness (Rq) between 20 nm and 30 nm, including, and   wherein the output coupling element comprises the roughness on the surface of the inorganic dielectric element facing away from the semiconductor layer sequence.   
     
     
         15 . The optoelectronic component according to  claim 14 , wherein the optoelectronic component is an organic light-emitting diode (OLED). 
     
     
         16 . The optoelectronic component according to  claim 14 , wherein the output coupling element is arranged directly at the semiconductor layer sequence. 
     
     
         17 . The optoelectronic component according to  claim 16 , further comprising:
 a carrier; and   a second output coupling element,   wherein the semiconductor layer sequence is arranged on the carrier, and   wherein a second output coupling element is arranged at a side of the carrier opposite the semiconductor layer sequence.