US2021269911A1PendingUtilityA1

Sputtering target

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Assignee: TANAKA PRECIOUS METAL INDPriority: Nov 27, 2015Filed: May 13, 2021Published: Sep 2, 2021
Est. expiryNov 27, 2035(~9.3 yrs left)· nominal 20-yr term from priority
Inventors:Kim Kong ThamRyousuke KushibikiToshiya YamamotoShin SaitoShintaro Hinata
C22C 5/04C22C 2202/02C04B 2235/408H01J 37/3491C04B 2235/405B22F 2998/10C04B 2235/3409C04B 35/01G11B 5/851H01J 37/3429C23C 14/3414C23C 14/18C22C 19/07C23C 14/0688C22C 1/1084C22C 1/05
68
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Claims

Abstract

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B 2 O 3 and the sputtering target comprises 10 to 50 vol % of the oxide.

Claims

exact text as granted — not AI-modified
1 . A sputtering target comprising metallic Co, metallic Pt, and an oxide, wherein
 the sputtering target contains no metallic Cr except inevitable impurities,   the oxide is B 2 O 3 , and   the sputtering target comprises 10 to 50 vol % of B 2 O 3 .   
     
     
         2 . (canceled) 
     
     
         3 . (canceled) 
     
     
         4 . (canceled) 
     
     
         5 . The sputtering target according to  claim 1 , wherein the sputtering target comprises 20 to 40 vol % of B 2 O 3 . 
     
     
         6 . The sputtering target according to  claim 1 , wherein the sputtering target comprises 25 to 35 vol % of B 2 O 3 . 
     
     
         7 . (canceled)

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