High q ltcc dielectric compositions and devices

Abstract

LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a zinc-magnesium-manganese-silicon oxide host.

1 - 16 . (cancel) 
     
     
         17 . A host material selected from the group consisting of Host I, Host II, Host III and Host IV, wherein:
 1. Host I comprises:
 i) 10-30 wt % ZnO, 
 ii) 0-10 wt % MgO, 
 iii) 65-90 wt % SiO 2 , and 
 iv) 0-5 wt % MnO; 
   2. Host II comprises:
 i) 10-30 wt % MgO, 
 ii) 0-10 wt % ZnO, 
 iii) 70-90 wt % SiO 2 , and 
   iv) 0-5 wt % MnO;   
     
     
       3. Host III comprises:
 i) 50-85 wt % ZnO, 
 ii) 0-20 wt % MgO, 
 iii) 15-40 wt % SiO 2 , and 
 iv) 0-5 wt % MnO; and 
 
     
     
       4. Host IV comprises:
 i) 45-70 wt % MgO, 
 ii) 0-25 wt % ZnO, 
 iii) 30-55 wt % SiO 2 , and 
 iv) 0-5 wt % MnO. 
 
     
     
         18 . A lead-free and cadmium-free dielectric material comprising, prior to firing:
 (a) 80-99 wt % of at least one host material of  claim 17  together with   (b) 0-5 wt % SiO 2 ,   (c) 0-5 wt % CaCO 3 ,   (d) 0-8 wt % H 3 BO 3 ,   (e) 0-5 wt % Li 2 CO 3 ,   (f) 0.1-5 wt % CuO,   (g) 0-5 wt % LiF,   (h) 0-5 wt % CaF 2 , and   (i) 0-12 wt % zinc borate,   
       or oxide equivalents of any of the foregoing, no lead and no cadmium. 
     
     
         19 . A lead-free and cadmium-free dielectric material comprising, prior to firing:
 (a) 20-50 wt % of at least one host material of  claim 17  together with   (b) 45-70 wt % SiO 2 ,   (c) 0.1-5 wt % CaCO 3 ,   (d) 0.1-8 wt % H 3 BO 3 ,   (e) 0.1-5 wt % Li 2 CO 3 ,   (f) 0.1-5 wt % CuO,   (g) 0-5 wt % LiF,   (h) 0-5 wt % CaF 2 , and   (i) 0-5 wt % zinc borate,   
       or oxide equivalents of any of the foregoing, no lead and no cadmium. 
     
     
         20 . A lead-free and cadmium-free dielectric material comprising, prior to firing:
 (a) 40-60 wt % of at least one host material of  claim 17  together with   (b) 30-50 wt % CaTiO 3 ,   (c) 0-5 wt % SiO 2 ,   (d) 0.1-5 wt % CaCO 3 ,   (e) 0.1-8 wt % H 3 BO 3      (f) 0.1-5 wt % Li 2 CO 3 ,   (g) 0-5 wt % CuO,   (h) 0-5 wt % LiF,   (i) 0-5 wt % CaF 2 , and   (j) 0-5 wt % zinc borate,   
       or oxide equivalents of any of the foregoing, no lead and no cadmium. 
     
     
         21 . The dielectric material of  claim 18 , wherein the dielectric material is in powder form. 
     
     
         22 . The dielectric material of  claim 18 , wherein a mean particle size ranges 0.1-3 microns. 
     
     
         23 . The dielectric material of  claim 18 , wherein the dielectric material comprises a crystalline phase and an amorphous phase. 
     
     
         24 . The dielectric material of  claim 18 , upon firing, comprising a low temperature cofired ceramic (LTCC). 
     
     
         25 . A lead-free and cadmium-free composition comprising a mixture of precursors that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
 (a) 0-40 wt % ZnO,   (b) 0-30 wt % MgO,   (c) 0-5 wt % MnO,   (d) 55-90 wt % SiO 2 ,   (e) 0-5 wt % CaO,   (f) 0-5 wt % TiO 2 ,   (g) 0.1-5 wt % B 2 O 3 ,   (h) 0.1-5 wt % Li 2 O,   (i) 0.1-5 wt % CuO,   (j) 0-5 wt % CaF 2 , and   (k) 0-5 wt % LiF,   no lead and no cadmium.   
     
     
         26 . A lead-free and cadmium-free composition comprising a mixture of precursors that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
 (a) 30-50 wt % ZnO,   (b) 0-10 wt % MgO,   (c) 0-5 wt % MnO,   (d) 5-25 wt % SiO 2 ,   (e) 8-28 wt % CaO,   (f) 15-35 wt % TiO 2 ,   (g) 0.1-5 wt % B 2 O 3 ,   (h) 0.1-5 wt % Li 2 O,   (i) 0-5 wt % CuO,   (j) 0-5 wt % CaF 2 ,   (k) 0-5 wt % LiF,   no lead and no cadmium.   
     
     
         27 . A lead-free and cadmium-free composition comprising a mixture of precursors that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
 (a) 45-80 wt % ZnO,   (b) 0-20 wt % MgO,   (c) 0-5 wt % MnO,   (d) 15-40 wt % SiO 2 ,   (e) 0-5 wt % CaO,   (f) 0-5 wt % TiO 2 ,   (g) 0.1-8 wt % B 2 O 3 ,   (h) 0-5 wt % Li 2 O,   (i) 0.1-5 wt % CuO,   (j) 0-5 wt % CaF 2 ,   (k) 0-5 wt % LiF,   no lead and no cadmium.   
     
     
         28 . A lead-free and cadmium-free composition comprising a mixture of precursors that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
 (a) 0-25 wt % ZnO,   (b) 40-70 wt % MgO,   (c) 0-5 wt % MnO,   (d) 15-55 wt % SiO 2 ,   (e) 0-5 wt % CaO,   (f) 0-5 wt % TiO 2 ,   (g) 0.1-8 wt % B 2 O 3 ,   (h) 0-5 wt % Li 2 O,   (i) 0.1-5 wt % CuO,   (j) 0-5 wt % CaF 2 ,   (k) 0-5 wt % LiF,   no lead and no cadmium.   
     
     
         29 . The lead-free and cadmium-free dielectric material of  claim 25 , wherein, after firing, the material or composition exhibits a Qf value of at least 5000 when measured at greater than 1 GHz. 
     
     
         30 . The lead-free and cadmium-free dielectric material of  claim 25 , wherein, after firing, the material or composition exhibits a dielectric constant K of 3-50. 
     
     
         31 . The lead-free and cadmium-free dielectric material of  claim 25 , wherein the dielectric material comprises a low temperature cofired ceramic (LTCC). 
     
     
         32 . An electric or electronic component comprising, prior to firing, the lead-free and cadmium-free dielectric material of  claim 18 , together with a conductive paste comprising:
 (a) 60-90 wt % Ag+Pd+Pt+Au,   (b) 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,   (c) 0.5-10 wt % of at least one glass frit, and   (d) 10-40 wt % of an organic portion.   
     
     
         33 . The electric or electronic component of  claim 32 , wherein the electric or electronic component is selected from the group consisting of high Q resonators, electro-magnetic interference filters, band pass filters, wireless packaging systems, and combinations thereof. 
     
     
         34 . A method of forming an electronic component comprising:
 (a1) applying the dielectric material of  claim 18  to a substrate; or   (a2) applying a tape comprising the dielectric material of  claim 18  to a substrate; or   (a3) compacting a plurality of particles of the dielectric material of  claim 18  to form a monolithic composite substrate; and   (b) firing the substrate at a temperature sufficient to sinter the dielectric material.   
     
     
         35 . The method of  claim 34 , wherein the firing is conducted at a temperature of from about 800° C. to about 900° C. 
     
     
         36 . A multilayer structure comprising at least one layer of the dielectric material of  claim 25  having a dielectric constant less than 7 in combination with at least one alternating separate layer of tape or paste having a dielectric constant of greater than 7 to form a multi-layer substrate wherein alternating layers have differing dielectric constants. 
     
     
         37 . A method of co-firing the multilayer structure of  claim 34 , wherein the co-firing is conducted at a temperature of from about 800° C. to about 900° C. 
     
     
         38 . A paste comprising the dielectric material of  claim 18 , wherein the paste comprises 10-30 wt % crystalline dielectric and 70-90 wt % amorphous dielectric.