Semiconductor package and method of manufacturing the same

Abstract

The present disclosure provides a semiconductor package. The semiconductor package includes a first die, a second die, a plurality of conductive plugs and a redistribution layer. The redistribution layer includes a first segment and a second segment electrically isolated from the first segment. The first segment of the redistribution layer electrically connects the first die to the second die, and the second segment of the redistribution layer electrically connects the first die to the conductive plugs.

What is claimed is: 
     
         1 . A semiconductor package, comprising:
 at least one first die;   at least one second die;   a plurality of conductive plugs; and   a redistribution layer comprising a first segment electrically connecting the first die to the second die and a second segment electrically isolated from the first segment to electrically connect the first die to the conductive plugs.   
     
     
         2 . The semiconductor package of  claim 1 , wherein the first die is stacked on the second die and the conductive plugs. 
     
     
         3 . The semiconductor package of  claim 1 , wherein the first segment of the redistribution layer is disposed between the first die and the second die, and the second segment of the redistribution layer is disposed between the first die and the conductive plugs. 
     
     
         4 . The semiconductor package of  claim 1 , wherein the first segment of the redistribution layer is surrounded by the second segment of the redistribution layer. 
     
     
         5 . The semiconductor package of  claim 1 , wherein the second dies are arranged horizontally to parallel the conductive plugs. 
     
     
         6 . The semiconductor package of  claim 1 , further comprising:
 a dielectric layer encasing the redistribution layer;   a first insulative material surrounding the first die; and   a second insulative material surrounding the second die and the conductive plugs.   
     
     
         7 . The semiconductor package of  claim 1 , further comprising:
 a passivation layer covering the second die and the conductive plugs;   a conductive layer penetrating through the passivation layer and comprising a first portion connected to the second die and a second portion connected to the conductive plugs; and   a plurality of solder bumps mounted on the conductive layer.   
     
     
         8 . A method of manufacturing a semiconductor package assembly, comprising:
 providing a plurality of first dies arranged horizontally;   forming a redistribution layer electrically coupled to the first dies, wherein the redistribution layer is divided into a first segment and a second segment electrically isolated from the first segment;   mounting a plurality of second dies on the first segment of the redistribution layer;   depositing a second insulative layer on the second dies and the redistribution layer; and   forming a plurality of conductive plugs penetrating through the second insulative material and contacting the second segment of the redistribution layer.   
     
     
         9 . The method of  claim 8 , further comprising forming at least one dielectric layer to encase the redistribution layer. 
     
     
         10 . The method of  claim 8 , further comprising:
 depositing a passivation layer on the second dies, the conductive plugs and the second insulating layers;   forming a conductive layer penetrating through the passivation layer, wherein the conductive layer comprises a first portion electrically coupled to the second dies and a second portion electrically isolated from the first portion and contacting the conductive plugs; and   forming a plurality of solder bumps connected to the conductive layer.   
     
     
         11 . The method of  claim 10 , further comprising performing a grinding process to expose conductive lines of the second dies before the deposition of the passivation layer. 
     
     
         12 . The method of  claim 8 , wherein a melting point of the first insulative material is greater than that of the second insulative material. 
     
     
         13 . The method of  claim 8 , wherein the first dies have a first distance therebetween, the second dies have a second distance therebetween, and the second distance is less than the first distance. 
     
     
         14 . The method of  claim 8 , wherein the first segment is disposed at central portion of the redistribution layer, and the second segment surrounds the first segment. 
     
     
         15 . The method of  claim 8 , wherein the first dies and the second dies are symmetric with respect to a central axis of the semiconductor package. 
     
     
         16 . The method of  claim 8 , further comprising molding the first dies with a first insulative material before the formation of the redistribution layer.