Supporting substrate, supporting substrate-attached laminate and method for manufacturing a package substrate for mounting a semiconductor device

Abstract

A method for manufacturing a package substrate for mounting a semiconductor device including: a first laminate preparing step of preparing a first laminate including a resin layer, a bonding layer that is provided on at least one surface side of the resin layer and includes peeling means, and a first metal layer provided on the bonding layer; a first wiring forming step of forming a first wiring conductor in the first laminate by etching the first metal layer; a second laminate forming step of forming a second laminate by laminating an insulating resin layer and a second metal layer in this order on a surface of the first laminate, the surface being provided with the first wiring conductor; a second wiring forming step of forming a second wiring conductor on the insulating resin layer by forming a non-through hole in the insulating resin layer.

1 . A method for manufacturing a package substrate for mounting a semiconductor device comprising:
 preparing a first laminate including a resin layer, a bonding layer that is provided on at least one surface side of the resin layer and includes a peeling medium, and a first metal layer provided on the bonding layer;   forming a first wiring conductor in the first laminate by etching the first metal layer;   forming a second laminate by laminating an insulating resin layer and a second metal layer in this order on a surface of the first laminate, the surface being provided with the first wiring conductor;   forming a second wiring conductor on the insulating resin layer by forming a non-through hole in the insulating resin layer, the non-through hole extending to the first wiring conductor, and subjecting the insulating resin layer with the non-through hole formed therein to electrolytic plating and/or electroless plating; and   peeling at least the resin layer off from the second laminate with the second wiring conductor formed therein.   
     
     
         2 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the forming the first, wiring conductor includes:
 laminating a resist on the first metal layer of the first laminate;   forming a wiring circuit pattern on the first metal layer by developing the resist via photolithography; and   forming the first wiring conductor on the bonding layer by patterning the .first metal layer using an etching liquid and removing the wiring circuit pattern on the patterned first metal layer.   
     
     
         3 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein in the forming the second laminate, the first wiring conductor is subjected to roughening and the insulating resin layer and the second metal layer are laminated in this order on the surface provided with the first wiring conductor subjected to the roughening, via heating and pressure application. 
     
     
         4 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein in the forming the second wiring conductor, an inner wall of the non-through hole is connected via the electrolytic plating and/or electroless plating and the second wiring conductor is formed via a subtractive process or a semi-additive process. 
     
     
         5 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein:
 the forming the second laminate and the forming the second wiring conductor are further repeated n times for the second laminate including the second wiring conductor formed on the insulating resin layer by the forming the second wiring conductor to form a n-th laminate having a built-up structure including (n+2)-layer wiring conductors; and   in the peeling, at least the resin layer is peeled from the n-th laminate.   
     
     
         6 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein in the forming the second wiring conductor, the non-through hole is formed by a laser. 
     
     
         7 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein in the peeling, at least the resin layer is physically peeled. 
     
     
         8 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein a thickness of the resin layer is no less than 1 μm. 
     
     
         9 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein a thickness of the first metal layer is no more than 100 μm. 
     
     
         10 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein a thickness of the bonding layer is no more than 100 μm. 
     
     
         11 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein a thickness of the first laminate is 30 to 300 μm. 
     
     
         12 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein a thickness of the insulating resin layer is 5 to 100 μm. 
     
     
         13 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the peeling includes removing at least the bonding layer from the second laminate with at least the resin layer peeled therefrom. 
     
     
         14 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 13 , wherein in the peeling, the removing is performed using an etching liquid or a desmear liquid. 
     
     
         15 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 13 , wherein in the peeling, the removal is performed via plasma treatment. 
     
     
         16 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the peeling medium is an intermediate layer that includes a carrier layer and a metal film having a thickness of no more than 5 μm and is disposed between the bonding layer and the resin layer, and the carrier layer is disposed on the resin layer side. 
     
     
         17 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 16 , wherein in the peeling, the resin layer and the carrier layer are peeled from the second laminate. 
     
     
         18 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the peeling medium is an intermediate layer that includes a fluorine-based resin and is disposed between the bonding layer and the resin layer. 
     
     
         19 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 18 , wherein in the peeling, the resin layer and the intermediate layer are peeled from the second laminate. 
     
     
         20 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the peeling medium is a thermally expandable particle, and the bonding layer includes the thermally expandable particle on a side that is an interface with the first metal layer. 
     
     
         21 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 20 , wherein in the peeling, at least the resin layer and the bonding layer are peeled from the second laminate. 
     
     
         22 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 1 , wherein the peeling medium is an intermediate layer that includes a release layer and a metal film having a thickness of no less than 1 μm and is provided between the bonding layer and the resin layer. 
     
     
         23 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 22 , wherein in the peeling, the resin layer and the intermediate layer are peeled from the second laminate. 
     
     
         24 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 16 , wherein the peeling further includes removing the intermediate layer. 
     
     
         25 . The method for manufacturing a package substrate for mounting a semiconductor device according to  claim 16 , wherein a thickness of the intermediate layer is no less than 1 μm.