Integrated circuit structure

Abstract

An IC structure includes a first plurality of metal segments extending in a first metal layer in a first direction and having a first pitch in a second direction perpendicular to the first direction, a second plurality of metal segments extending in a second metal layer in the second direction and having a second pitch in the first direction, and a third plurality of metal segments extending in a third metal layer in the first direction and having a third pitch in the second direction. The second metal layer is a next consecutive layer overlying the first metal layer, the third metal layer is a next consecutive layer overlying the second metal layer, and a ratio of the second pitch to the third pitch is greater than one.

What is claimed is: 
     
         1 . An integrated circuit (IC) structure comprising:
 a first plurality of metal segments extending in a first metal layer in a first direction and having a first pitch in a second direction perpendicular to the first direction;   a second plurality of metal segments extending in a second metal layer in the second direction and having a second pitch in the first direction; and   a third plurality of metal segments extending in a third metal layer in the first direction and having a third pitch in the second direction,   wherein
 the second metal layer is a next consecutive layer overlying the first metal layer, 
 the third metal layer is a next consecutive layer overlying the second metal layer, and 
 a ratio of the second pitch to the third pitch is greater than one. 
   
     
     
         2 . The IC structure of  claim 1 , wherein the ratio of the second pitch to the third pitch is greater than or equal to 1.25. 
     
     
         3 . The IC structure of  claim 1 , wherein the ratio of the second pitch to the third pitch has a value ranging from 1.1 to 1.5. 
     
     
         4 . The IC structure of  claim 1 , wherein the first metal layer is a metal zero layer. 
     
     
         5 . The IC structure of  claim 1 , wherein a metal segment of the first plurality of metal segments overlies a polysilicon or active region. 
     
     
         6 . The IC structure of  claim 1 , wherein at least one of
 two or more metal segments of the first plurality of metal segments are coextensive in the second direction,   two or more metal segments of the second plurality of metal segments are coextensive in the first direction, or   two or more metal segments of the third plurality of metal segments are coextensive in the second direction.   
     
     
         7 . The IC structure of  claim 1 , wherein
 a plurality of metal layers comprises the first through third metal layers, and   the plurality of metal layers comprises a number of metal layers ranging from ten to fifteen.   
     
     
         8 . The IC structure of  claim 7 , wherein, with the exception of the ratio of the second pitch to the third pitch being greater than one, each metal layer of the plurality of metal layers has a pitch greater than or equal to a pitch of each underlying metal layer of the plurality of metal layers. 
     
     
         9 . The IC structure of  claim 1 , wherein a ratio of the second pitch to the first pitch is greater than one. 
     
     
         10 . The IC structure of  claim 1 , further comprising at least one of:
 a first via overlying and electrically connected to a metal segment of the first plurality of metal segments;   a second via overlying and electrically connected to a metal segment of the second plurality of metal segments; or   a third via overlying and electrically connected to a metal segment of the third plurality of metal segments.   
     
     
         11 . The IC structure of  claim 1 , wherein the IC structure is a component of a processing device. 
     
     
         12 . An integrated circuit (IC) structure comprising:
 a first metal layer comprising a first plurality of metal segments extending in a first direction;   a second metal layer comprising a second plurality of metal segments extending in a second direction perpendicular to the first direction and having a first pitch in the first direction; and   a third metal layer comprising a third plurality of metal segments extending in the first direction and having a second pitch in the second direction,   wherein
 the second metal layer is a next consecutive layer overlying the first metal layer, 
 the third metal layer is a next consecutive layer overlying the second metal layer, 
 a ratio of the first pitch to the second pitch is greater than 1.25, and 
 the IC structure is a component of a processing device. 
   
     
     
         13 . The IC structure of  claim 12 , wherein the ratio of the first pitch to the second pitch has a value ranging up to 1.5. 
     
     
         14 . The IC structure of  claim 12 , wherein the first metal layer is a metal zero layer. 
     
     
         15 . The IC structure of  claim 12 , wherein at least one of
 two or more metal segments of the first plurality of metal segments are coextensive in the second direction,   two or more metal segments of the second plurality of metal segments are coextensive in the first direction, or   two or more metal segments of the third plurality of metal segments are coextensive in the second direction.   
     
     
         16 . The IC structure of  claim 12 , further comprising at least one of:
 a first via overlying and electrically connected to a metal segment of the first plurality of metal segments;   a second via overlying and electrically connected to a metal segment of the second plurality of metal segments; or   a third via overlying and electrically connected to a metal segment of the third plurality of metal segments.   
     
     
         17 . An integrated circuit (IC) structure comprising:
 a metal zero layer comprising a first plurality of metal segments extending in a first direction;   a metal one layer comprising a second plurality of metal segments extending in a second direction perpendicular to the first direction and having a first pitch in the first direction; and   a metal two layer comprising a third plurality of metal segments extending in the first direction and having a second pitch in the second direction,   wherein a ratio of the first pitch to the second pitch has a value ranging from 1.1 to 1.5.   
     
     
         18 . The IC structure of  claim 17 , wherein the ratio of the first pitch to the second pitch is greater than 1.25. 
     
     
         19 . The IC structure of  claim 17 , further comprising at least one of:
 a metal zero via electrically connected to a metal segment of the first plurality of metal segments;   a metal one via electrically connected to a metal segment of the second plurality of metal segments; or   a metal two via electrically connected to a metal segment of the third plurality of metal segments.   
     
     
         20 . The IC structure of  claim 17 , wherein the IC structure is a component of a processing device.