Solid-state imaging device and electronic apparatus

Abstract

Provided is a solid-state imaging device that includes a normal pixel for generating a pixel signal and a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF. In this solid-state imaging device, the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from the optical axis of the lens, and an antireflection portion that prevents reflection of the incident light gathered by the lens unit is formed on the light blocking layer.

What is claimed is: 
     
         1 . A solid-state imaging device, comprising:
 a normal pixel for generating a pixel signal; and   a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF, wherein
 the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, 
 the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from an optical axis of the lens, 
 the normal pixel includes a color filter between the lens and the photoelectric conversion layer, 
 the color filter is in direct contact with the light blocking layer, and 
 an antireflection portion configured to prevent reflection of the incident light gathered by the lens is formed on the light blocking layer. 
   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the antireflection portion is an antireflection film formed on a sidewall surface of the light blocking layer facing the apertural portion. 
     
     
         3 . The solid-state imaging device according to  claim 2 , wherein the antireflection portion is the antireflection film further formed on an upper surface of the light blocking layer on a side of the lens. 
     
     
         4 . The solid-state imaging device according to  claim 2 , wherein
 the light blocking layer is made of a metal, and   the antireflection film is made of a metal oxide formed by subjecting the metal to an oxidation treatment.   
     
     
         5 . The solid-state imaging device according to  claim 2 , wherein
 the light blocking layer is made of W, and   the antireflection film is made of WOx formed by subjecting the W to an oxidation treatment.   
     
     
         6 . The solid-state imaging device according to  claim 1 , wherein the antireflection portion is a tapered portion in which the light blocking layer becomes thinner in a direction toward the apertural portion. 
     
     
         7 . The solid-state imaging device according to  claim 2 , wherein
 the normal pixel and the phase difference detection pixel each further include an antireflection layer on an upper surface of the photoelectric conversion layer on a side of the lens, and   the antireflection layer of the phase difference detection pixel has a removed portion that is a portion selectively removed.   
     
     
         8 . The solid-state imaging device according to  claim 2 , wherein the light blocking layer is thinner than a light blocking film formed in an OPB region. 
     
     
         9 . The solid-state imaging device according to  claim 2 , wherein the solid-state imaging device is of a back-illuminated type. 
     
     
         10 . An electronic apparatus equipped with a solid-state imaging device,
 the solid-state imaging device including:
 a normal pixel for generating a pixel signal; and 
 a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF, wherein
 the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, 
 the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from an optical axis of the lens, 
 the normal pixel includes a color filter between the lens and the photoelectric conversion layer, 
 the color filter is in direct contact with the light blocking layer, and 
 
   an antireflection portion configured to prevent reflection of the incident light gathered by the lens is formed on the light blocking layer.