Method for forming capacitor, semiconductor device, module, and electronic device

Abstract

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

What is claimed is: 
     
         1 . A capacitor comprising:
 a first conductor;   a second conductor; and   an insulator,   wherein the first conductor and the second conductor overlap with each other with the insulator therebetween,   wherein the first conductor includes tungsten and silicon, and   wherein the insulator includes a silicon oxide film formed by oxidizing the first conductor.   
     
     
         2 . A semiconductor device comprising:
 a transistor; and   the capacitor according to  claim 1 ,   wherein the transistor comprises a drain electrode,   wherein the capacitor comprises a first electrode and a second electrode, and   wherein the first electrode of the capacitor is electrically connected to the drain electrode.   
     
     
         3 . A module comprising:
 the semiconductor device according to  claim 2 ; and   a printed circuit board.   
     
     
         4 . An electronic device comprising:
 the module according to  claim 3 ; and   at least one of a speaker and an operation key.   
     
     
         5 . A capacitor comprising:
 a first conductor;   a second conductor; and   an insulator in contact with the first conductor,   wherein the first conductor and the second conductor overlap with each other with the insulator therebetween,   wherein the first conductor includes tungsten and silicon, and   wherein the insulator is a silicon oxide film with a thickness less than or equal to 15 nm.   
     
     
         6 . A semiconductor device comprising:
 a transistor; and   the capacitor according to  claim 5 ,   wherein the transistor comprises a drain electrode,   wherein the capacitor comprises a first electrode and a second electrode, and   wherein the first electrode of the capacitor is electrically connected to the drain electrode.   
     
     
         7 . A module comprising:
 the semiconductor device according to  claim 6 ; and   a printed circuit board.   
     
     
         8 . An electronic device comprising:
 the module according to  claim 7 ; and   at least one of a speaker and an operation key.