Stacked Integrated Circuit Structure and Method of Forming

Abstract

A semiconductor device and a method of forming the device are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

What is claimed is: 
     
         1 . A method comprising:
 attaching a first die and a second die to a carrier substrate, the first die comprising first contact pads, the second die comprising second contact pads;   bonding a substrate to a first contact pad of the first contact pads and to a second contact pad of the second contact pads, the substrate comprising a first through via extending from a front-side of the substrate to a back-side of the substrate, the front-side of the substrate facing the first contact pads and the second contact pads;   after bonding the substrate, forming a second through via extending from a third contact pad of the first contact pads;   forming a molding compound around the second through via, the substrate, the first die, and the second die; and   forming a first external connector over the substrate and a second external connector over the molding compound, the first external connector connected to the first through via, the second external connector connected to the second through via.   
     
     
         2 . The method of  claim 1  further comprising:
 forming a third through via extending from a fourth contact pad of the second contact pads, the molding compound formed around the third through via; and 
 forming a third external connector over the molding compound, the third external connector connected to the third through via. 
 
     
     
         3 . The method of  claim 1 , wherein forming the molding compound comprises:
 dispensing the molding compound around the substrate, the first die, and the second die; and   thinning the molding compound until the first through via is exposed.   
     
     
         4 . The method of  claim 1 , wherein forming the second through via comprises:
 etching an opening in the molding compound, the opening exposing the third contact pad;   plating a conductive material in the opening and over the molding compound; and   removing portions of the conductive material over the molding compound.   
     
     
         5 . The method of  claim 1 , wherein forming the second through via comprises:
 forming a mask layer over the first die, the mask layer having an opening exposing the third contact pad;   plating a conductive material in the opening; and   removing the mask layer and portions of the conductive material over the mask layer.   
     
     
         6 . The method of  claim 1 , wherein the first die and the second die are integrated circuit dies, and the substrate is an interposer. 
     
     
         7 . The method of  claim 1 , wherein the substrate is positioned overlying each of the first die and the second die in part. 
     
     
         8 . A method comprising:
 bonding an interposer face-to-face to a first integrated circuit die and face-to-face to a second integrated circuit die, the interposer comprising a through via;   after bonding the interposer to the first integrated circuit die and to the second integrated circuit die:
 forming a molding compound around the interposer; and 
 forming a first conductive via and a second conductive via adjacent the interposer, the first conductive via connected to the first integrated circuit die, the second conductive via connected to second first integrated circuit die, the first conductive via and the second conductive via extending through the molding compound; and 
   forming connectors over the molding compound and the interposer, the connectors connected to the through via, the first conductive via, and the second conductive via.   
     
     
         9 . The method of  claim 8 , wherein each of the connectors is formed of the same conductive materials and is formed to the same width. 
     
     
         10 . The method of  claim 8 , wherein the molding compound is formed before the first conductive via is formed. 
     
     
         11 . The method of  claim 8 , wherein the molding compound is formed after the first conductive via is formed. 
     
     
         12 . The method of  claim 8 , wherein a center point of the interposer overlies an area between the first integrated circuit die and the second integrated circuit die. 
     
     
         13 . The method of  claim 8 , wherein forming the molding compound comprises:
 dispensing the molding compound around the interposer, the first integrated circuit die, and the second integrated circuit die; and   thinning the molding compound until the through via is exposed.   
     
     
         14 . The method of  claim 8 , wherein the connectors are wider than each of the through via, the first conductive via, and the second conductive via. 
     
     
         15 . A method comprising:
 bonding an interposer to a first integrated circuit die and to a second integrated circuit die, the interposer being in a face-to-face connection with the first integrated circuit die and with the second integrated circuit die, the interposer comprising a through via;   forming a molding compound around the interposer, the first integrated circuit die, and the second integrated circuit die;   after bonding the interposer to the first integrated circuit die and to the second integrated circuit die, forming a first conductive via and a second conductive via in the molding compound, the first conductive via connected to the first integrated circuit die, the second conductive via connected to second first integrated circuit die; and   forming connectors over the molding compound and the interposer, the connectors connected to the through via, the first conductive via, and the second conductive via.   
     
     
         16 . The method of  claim 15 , wherein each of the connectors is formed of the same conductive materials and is formed to the same width. 
     
     
         17 . The method of  claim 15 , wherein the molding compound is formed before the first conductive via is formed. 
     
     
         18 . The method of  claim 15 , wherein the molding compound is formed after the first conductive via is formed. 
     
     
         19 . The method of  claim 15 , wherein a center point of the interposer overlies an area between the first integrated circuit die and the second integrated circuit die. 
     
     
         20 . The method of  claim 15 , wherein forming the molding compound comprises:
 dispensing the molding compound around the interposer, the first integrated circuit die, and the second integrated circuit die; and   thinning the molding compound until the through via is exposed.