Method of manufacturing semiconductor device

Abstract

A method is disclosed for manufacturing a semiconductor device including a mounting substrate, a semiconductor chip, a rear-surface metal layer, an AuSn solder layer, and a solder blocking metal layer, is disclosed. The semiconductor chip is mounted on the mounting substrate, and includes front and rear surfaces, and a heat generating element. The rear-surface metal layer includes gold (Au). The AuSn solder layer is located between the mounting substrate and the rear surface to fix the semiconductor chip to the mounting substrate. The solder blocking metal layer is located between the rear surface and the mounting substrate, and in a non-heating region excluding a heating region in which the heat generating element is formed. The solder blocking metal layer includes at least one of NiCr, Ni and Ti and extends to an edge of the semiconductor chip. A void is provided between the solder blocking metal layer and the AuSn solder layer.

1 - 6 . (canceled) 
     
     
         7 . A method of manufacturing a semiconductor device, comprising:
 forming a rear-surface metal layer including gold (Au) on a rear surface of a semiconductor chip;   forming a solder blocking metal layer including at least one of nickel-chrome (NiCr), nickel (Ni) and titanium (Ti) on a part of the rear-surface metal layer; and   attaching a surface including the rear-surface metal layer and the solder blocking layer of the semiconductor chip to a mounting substrate with an AuSn solder.   
     
     
         8 . A method of manufacturing a semiconductor device, comprising:
 forming a solder blocking metal layer including at least one of nickel-chrome (NiCr), nickel (Ni) and titanium (Ti) on a rear surface of a semiconductor chip;   forming a rear-surface metal layer including gold (Au) on the rear surface of a semiconductor chip including the solder blocking metal layer;   exposing the solder blocking metal layer from the rear-surface metal layer; and   attaching a surface including the rear-surface metal layer and the solder blocking layer of the semiconductor chip to a mounting substrate with an AuSn solder layer.   
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 7 , wherein the semiconductor chip includes a silicon carbide (SiC) substrate and the rear-surface metal layer is formed on the SiC substrate. 
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 7 , wherein the mounting substrate is a bottom material of a package. 
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 7 , wherein the attaching of the semiconductor chip is performed by a scrubbing process. 
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 8 , wherein the semiconductor chip includes a silicon carbide (SiC) substrate and the rear-surface metal layer is formed on the SiC substrate. 
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 8 , wherein the mounting substrate is a bottom material of a package. 
     
     
         14 . The method of manufacturing a semiconductor device according to  claim 8 , wherein the attaching of the semiconductor chip is performed by a scrubbing process.