Gas detection complex and method for producing same, gas sensor comprising gas detection complex and method for manufacturing same

Abstract

The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.

1 . A complex for detecting gas, the complex containing:
 a nanostructure made of an oxide semiconductor; and   a Terbium (Tb) additive supported on the nanostructure.   
     
     
         2 . The complex of  claim 1 , wherein the oxide semiconductor is selected from a group consisting of tin oxide (SnO 2 ), zinc oxide (ZnO), and indium oxide (In 2 O 3 ). 
     
     
         3 . The complex of  claim 1 , wherein the nanostructure has a hollow structure or an egg yolk structure. 
     
     
         4 . The complex of  claim 1 , wherein the oxide semiconductor is made of tin oxide (SnO 2 ),
 wherein the terbium (Tb) additive is supported in an amount from 0.5 at % to 20 at % based on a total amount of tin (Sn) of the nanostructure.   
     
     
         5 . The complex of  claim 1 , wherein the gas to be tested is reducing gas selected from a group consisting of acetone, carbon monoxide, ammonia, toluene, xylene, benzene, and mixtures thereof. 
     
     
         6 . A gas sensor for detecting gas, the gas sensor comprising:
 a substrate;   a sensing layer disposed on the substrate and containing a complex for detecting gas responsive to the gas to be tested; and   a terbium (Tb) layer disposed on the sensing layer,   wherein the complex for detecting the gas contains a nanostructure made of an oxide semiconductor.   
     
     
         7 . The gas sensor of  claim 6 , wherein a thickness of the terbium (Tb) layer is equal to or greater 50 nm and equal to or less than 250 nm. 
     
     
         8 . The gas sensor of  claim 6 , wherein the complex for detecting the gas further contains a Terbium (Tb) additive supported on the nanostructure. 
     
     
         9 . The gas sensor of  claim 6 , wherein the oxide semiconductor is selected from a group consisting of tin oxide (SnO 2 ), zinc oxide (ZnO), and indium oxide (In 2 O 3 ). 
     
     
         10 . The gas sensor of  claim 6 , wherein the nanostructure has a hollow structure or an egg yolk structure. 
     
     
         11 . A method for preparing a complex for detecting gas, the method comprising:
 a solution preparing step of preparing solution containing at least one salt selected from a group consisting of tin (Sn) salt, zinc (Zn) salt, and indium (In) salt, terbium (Tb) salt, and an organic acid or sugar;   an ultrasonic spray pyrolysis step of performing an ultrasonic spray pyrolysis reaction by spraying the solution through an ultrasonic spray pyrolysis apparatus; and   an obtaining step of obtaining fine powders as a result of the ultrasonic spray pyrolysis reaction.   
     
     
         12 . The method of  claim 11 , wherein the tin (Sn) salt is selected from a group consisting of SnC 2 O 4 , SnCl 4 .xH 2 O, and mixtures thereof,
 wherein the zinc (Zn) salt is selected from a group consisting of Zn(NO 3 ) 2 .xH 2 O and mixtures thereof,   wherein the indium (In) salt is selected from a group consisting of In(NO 3 ) 3 .xH 2 O and mixtures thereof,   wherein the terbium (Tb) salt is selected from a group consisting of TbCl 3 .6H 2 O and mixtures thereof,   wherein the organic acid is selected from a group consisting of citric acid and mixtures thereof, and   wherein the sugar is selected from a group consisting of sucrose and mixtures thereof.   
     
     
         13 . The method of  claim 11 , wherein the ultrasonic spray pyrolysis step includes:
 spraying the solution prepared from the solution preparing step into an electric furnace heated at a temperature equal to or higher than 700° C. and equal to or lower than 1000° C. at a spray speed equal to or higher than 5 L/m and equal to or lower than 20 L/m.