Substrate cleaning method and substrate cleaning apparatus

Abstract

A substrate cleaning method includes a processing liquid supplying step which supplies a processing liquid that contains a solute and a volatile solvent to an upper surface of a substrate, a film forming step in which the solvent is at least partially volatilized from the processing liquid and solidified or hardened to forma particle holding layer on the upper surface of the substrate, and a removal step in which a peeling liquid is supplied to the upper surface of the substrate to peel and remove the particle holding layer. A solute composition in the solute is insoluble in the peeling liquid before being heated to a temperature equal/higher than a quality-changing temperature to become soluble in the peeling liquid. During film forming, the processing liquid is heated to a temperature below the quality-changing temperature, to form the particle holding layer, without changing the quality of the solute composition. A residue removal step that removes a residue removing liquid which dissolves before being heated to a temperature equal/higher than the quality-changing temperature is supplied to the upper surface of the substrate, to remove residues that remain.

What is claimed is: 
     
         1 . A substrate cleaning method comprising:
 a processing liquid supplying step of supplying a processing liquid that includes a solute and a solvent, to an upper surface of a substrate;   a film forming step in which the solvent is at least partially volatilized from the processing liquid supplied to the upper surface of the substrate, by which the processing liquid is solidified or hardened to form a particle holding layer on the upper surface of the substrate; and   a removal step in which a peeling liquid, which peels the particle holding layer, is supplied to the upper surface of the substrate, thereby peeling and removing the particle holding layer from the upper surface of the substrate;   wherein the solute included in the particle holding layer has such properties of being insoluble in the peeling liquid before being heated at a temperature equal to or higher than a quality-changing temperature, and of becoming soluble in the peeling liquid by being heated at a temperature equal to or higher than the quality-changing temperature,   the film forming step includes a heating step in which the processing liquid supplied to the upper surface of the substrate is heated at a temperature less than the quality-changing temperature, thereby forming the particle holding layer on the upper surface of the substrate,   the method further comprises a residue removal step in which a residue removing liquid which has a property of dissolving the solute before being heated at a temperature equal to or higher than the quality-changing temperature is supplied to the upper surface of the substrate after the removal step, thereby removing residues that remain on the upper surface of the substrate after the particle holding layer has been removed, and   the residue removing liquid is an organic solvent which is selected from thinner, toluene, acetates, alcohols, and glycols.   
     
     
         2 . The substrate cleaning method according to  claim 1 , wherein the organic solvent is isopropyl alcohol. 
     
     
         3 . The substrate cleaning method according to  claim 1 , wherein the peeling liquid includes at least one of deionized water, carbonated water, electrolyzed ion water, hydrogen water, ozone water, a hydrochloric acid aqueous solution, ammonia solution, mixed solution of ammonia water and hydrogen peroxide aqueous, aqueous solution of tetramethylammonium hydroxide, and chlorine aqueous solution. 
     
     
         4 . The substrate cleaning method according to  claim 1 , wherein the method further comprises a rinse step of supplying a rinse liquid to the upper surface of the substrate to wash the peeling liquid away from the upper surface of the substrate, and
 the rinse liquid includes at least one of deionized water, carbonated water, electrolyzed ion water, hydrogen water, ozone water, and a hydrochloric acid aqueous solution with a concentration of 10 ppm to 100 ppm.   
     
     
         5 . The substrate cleaning method according to  claim 1 , wherein the solute is a resin which has such properties of being hardly soluble or insoluble in the peeling liquid before being heated at a temperature equal to or higher than the quality-changing temperature, and of becoming soluble in the peeling liquid by being heated at a temperature equal to or higher than the quality-changing temperature. 
     
     
         6 . The substrate cleaning method according to  claim 1 , wherein the peeling liquid is compatible with the solvent. 
     
     
         7 . A substrate cleaning method comprising:
 a processing liquid supplying step of supplying a processing liquid that includes a solute and a solvent, to an upper surface of a substrate;   a film forming step in which the solvent is at least partially volatilized from the processing liquid supplied to the upper surface of the substrate, by which the processing liquid is solidified or hardened to form a particle holding layer on the upper surface of the substrate; and   a removal step in which a peeling liquid, which peels the particle holding layer, is supplied to the upper surface of the substrate, thereby peeling and removing the particle holding layer from the upper surface of the substrate;   wherein the solute included in the particle holding layer has such properties of being insoluble in the peeling liquid before being heated at a temperature equal to or higher than a quality-changing temperature, and of becoming soluble in the peeling liquid by being heated at a temperature equal to or higher than the quality-changing temperature,   the film forming step includes a heating step in which the processing liquid supplied to the upper surface of the substrate is heated at a temperature less than the quality-changing temperature, thereby forming the particle holding layer on the upper surface of the substrate,   the method further comprises a residue removal step in which a residue removing liquid which has a property of dissolving the solute before being heated at a temperature equal to or higher than the quality-changing temperature is supplied to the upper surface of the substrate after the removal step, thereby removing residues that remain on the upper surface of the substrate after the particle holding layer has been removed, and   the residue removing liquid is an acid liquid which is selected from acetic acid, formic acid, and hydroxyl acetic acid.   
     
     
         8 . The substrate cleaning method according to  claim 7 , wherein the peeling liquid includes at least one of deionized water, carbonated water, electrolyzed ion water, hydrogen water, ozone water, a hydrochloric acid aqueous solution, ammonia solution, mixed solution of ammonia water and hydrogen peroxide aqueous, aqueous solution of tetramethylammonium hydroxide, and chlorine aqueous solution. 
     
     
         9 . The substrate cleaning method according to  claim 7 , wherein the method further comprises a rinse step of supplying a rinse liquid to the upper surface of the substrate to wash the peeling liquid away from the upper surface of the substrate, and
 the rinse liquid includes at least one of deionized water, carbonated water, electrolyzed ion water, hydrogen water, ozone water, and a hydrochloric acid aqueous solution with a concentration of 10 ppm to 100 ppm.   
     
     
         10 . The substrate cleaning method according to  claim 7 , wherein the solute is a resin which has such properties of being hardly soluble or insoluble in the peeling liquid before being heated at a temperature equal to or higher than the quality-changing temperature, and of becoming soluble in the peeling liquid by being heated at a temperature equal to or higher than the quality-changing temperature. 
     
     
         11 . The substrate cleaning method according to  claim 7 , wherein the peeling liquid is compatible with the solvent.