Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus

Abstract

The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.

1 - 12 . (canceled) 
     
     
         13 . A semiconductor device comprising a first chip and a second chip, wherein the first chip comprises:
 a pixel region including a plurality of electrically-connected wires periodically and repeatedly disposed on a bonding surface in a predetermined unit in the pixel region, and   a first dummy wire disposed on the bonding surface, wherein the first dummy wire is coupled to a second dummy wire of the second chip.   
     
     
         14 . The semiconductor device according to  claim 13 , wherein the first dummy wire and the second dummy wire are disposed to correspond to at least a center part of the predetermined unit. 
     
     
         15 . The semiconductor device according to  claim 13 , wherein
 the bonding surface opposes a second bonding surface, and   the second dummy wire is disposed on the second bonding surface.   
     
     
         16 . The semiconductor device according to claim 15 , wherein a pattern of the first dummy wire is substantially identical to a pattern of the second dummy wire. 
     
     
         17 . The semiconductor device according to  claim 15 , wherein a pattern of the first dummy wire is different from a pattern of the second dummy wire. 
     
     
         18 . The semiconductor device according to  claim 13 , wherein the first dummy wire is disposed corresponding to a floating diffusion. 
     
     
         19 . The semiconductor device according to  claim 13 , wherein
 a real wire of the plurality of electrically-connected wires is disposed on the bonding surface of the pixel region with the first dummy wire at a pitch corresponding to the predetermined unit, wherein the real wire transmits a pixel signal.   
     
     
         20 . An electronic apparatus comprising a semiconductor device, the semiconductor device comprising a first chip and a second chip, the first chip comprising:
 a pixel region including a plurality of electrically-connected wires periodically and repeatedly disposed on a bonding surface in a predetermined unit in the pixel region, and   a first dummy wire disposed on the bonding surface, wherein the first dummy wire is coupled to a second dummy wire of the second chip.   
     
     
         21 . The electronic apparatus according to  claim 20 , wherein the first dummy wire and the second dummy wire are disposed to correspond to at least a center part of the predetermined unit. 
     
     
         22 . The electronic apparatus according to  claim 20 , wherein
 the bonding surface opposes a second bonding surface, and   the second dummy wire is disposed on the second bonding surface.   
     
     
         23 . The electronic apparatus according to  claim 22 , wherein a pattern of the first dummy wire is substantially identical to a pattern of the second dummy wire. 
     
     
         24 . The electronic apparatus according to  claim 22 , wherein a pattern of the first dummy wire is different from a pattern of the second dummy wire. 
     
     
         25 . The electronic apparatus according to  claim 20 , wherein the first dummy wire is disposed corresponding to a floating diffusion. 
     
     
         26 . The electronic apparatus according to  claim 20 , wherein
 a real wire of the plurality of electrically-connected wires is disposed on the bonding surface of the pixel region with the first dummy wire at a pitch corresponding to the predetermined unit, wherein the real wire transmits a pixel signal.   
     
     
         27 . A solid-state image pickup element comprising a first chip and a second chip, wherein the first chip comprises:
 a pixel region including a plurality of electrically-connected wires periodically and repeatedly disposed on a bonding surface in a predetermined unit in the pixel region,   and a first dummy wire disposed on the bonding surface, wherein the first dummy wire is coupled to a second dummy wire of the second chip.   
     
     
         28 . The electronic apparatus according to  claim 27 , wherein the first dummy wire and the second dummy wire are disposed to correspond to at least a center part of the predetermined unit. 
     
     
         29 . The electronic apparatus according to  claim 27 , wherein
 the bonding surface opposes a second bonding surface, and   the second dummy wire is disposed on the second bonding surface.   
     
     
         30 . The electronic apparatus according to  claim 29 , wherein a pattern of the first dummy wire is substantially identical to a pattern of the second dummy wire. 
     
     
         31 . The electronic apparatus according to  claim 29 , wherein a pattern of the first dummy wire is different from a pattern of the second dummy wire. 
     
     
         32 . The electronic apparatus according to  claim 27 , wherein the first dummy wire is disposed corresponding to a floating diffusion.