Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process

Abstract

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a spatially multi-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

What is claimed is: 
     
         1 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a factory interface;   a laser scribe apparatus coupled with the factory interface and comprising a laser assembly configured to provide a spatially multi-focused laser beam; and   a plasma etch chamber coupled with the factory interface.   
     
     
         2 . The system of  claim 1 , wherein the laser assembly is configured to provide the spatially multi-focused laser beam having a first beam portion focused at a first depth, and a second beam portion focused at a second depth, the second depth vertically beneath the first depth. 
     
     
         3 . The system of  claim 1 , wherein the laser assembly is configured to provide a third beam portion focused at a third depth, the third depth vertically beneath the second depth. 
     
     
         4 . The system of  claim 1 , wherein the laser assembly comprises a diffractive optical element (DOE). 
     
     
         5 . The system of  claim 1 , wherein the laser assembly comprises a Gaussian source laser beam. 
     
     
         6 . The system of  claim 1 , wherein the laser assembly comprises a femto-second source laser beam. 
     
     
         7 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a plasma etch chamber;   a robotic transfer chamber coupled to the plasma etch chamber;   a load lock;   a laser scribe apparatus comprising a laser assembly configured to provide a spatially multi-focused laser beam, the spatially multi-focused laser beam to form trenches in a semiconductor wafer, the trenches comprising essentially vertical sidewalls; and   a factory interface coupled to the robotic transfer chamber by the load lock, and the factory interface coupled to the laser scribe apparatus, wherein the factory interface comprises a robot with an arm or a blade, wherein the semiconductor wafer is transferred from the laser scribe apparatus to the robot of the factory interface, from the robot of the factory interface to the load lock, from the load lock to the robotic transfer chamber, and from the robotic transfer chamber to the plasma etch chamber.   
     
     
         8 . The system of  claim 7 , wherein the laser assembly is configured to provide the spatially multi-focused laser beam having a first beam portion focused at a first depth, and a second beam portion focused at a second depth, the second depth vertically beneath the first depth. 
     
     
         9 . The system of  claim 7 , wherein the laser assembly is configured to provide a third beam portion focused at a third depth, the third depth vertically beneath the second depth. 
     
     
         10 . The system of  claim 7 , wherein the laser assembly comprises a diffractive optical element (DOE). 
     
     
         11 . The system of  claim 7 , wherein the laser assembly comprises a Gaussian source laser beam. 
     
     
         12 . The system of  claim 7 , wherein the laser assembly comprises a femto-second source laser beam.