Support assembly

Abstract

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

What is claimed is: 
     
         1 . A method for removing native oxides from a substrate surface, comprising:
 supporting a substrate in a processing chamber;   cooling the substrate to a first temperature within the processing chamber;   directing gas species to the cooled substrate to react with the native oxides thereon while forming a film on the substrate, wherein the gas species are flowed through a gas distribution plate comprising a heating element coupled with the gas distribution plate;   positioning the substrate in close proximity to the gas distribution plate; and   heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate the film.   
     
     
         2 . The method of  claim 1 , wherein the gas distribution plate is heated to a temperature within a range from about 100° C. and to about 150° C. while heating the substrate within the processing chamber to sublimate the film. 
     
     
         3 . The method of  claim 1 , further comprising removing the sublimated film from the chamber. 
     
     
         4 . The method of  claim 1 , wherein the film comprises a material comprising nitrogen and fluorine atoms. 
     
     
         5 . The method of  claim 1 , wherein cooling the substrate comprises flowing a coolant through a support assembly having the substrate disposed thereon and maintaining the first temperature at about room temperature or less. 
     
     
         6 . The method of  claim 5 , wherein the first temperature is at about 22° C. or less. 
     
     
         7 . The method of  claim 1 , wherein heating the substrate comprises positioning the substrate adjacent a heated gas distribution plate disposed within the processing chamber. 
     
     
         8 . The method of  claim 7 , wherein the second temperature is at about 120° C. 
     
     
         9 . The method of  claim 7 , wherein the substrate is located within a range from about 10 mils and to about 200 mils from the heated gas distribution plate. 
     
     
         10 . The method of  claim 1 , wherein the gas species are reactive species generated from a gas mixture comprising ammonia and nitrogen fluoride. 
     
     
         11 . The method of  claim 10 , wherein the gas mixture further comprises a carrier gas. 
     
     
         12 . The method of  claim 2 , wherein the substrate is located within a range from about 10 mils to about 200 mils from the heated gas distribution plate. 
     
     
         13 . The method of  claim 10 , wherein the gas mixture comprises at least a 3 to 1 molar ratio of ammonia to nitrogen trifluoride. 
     
     
         14 . The method of  claim 13 , wherein the molar ratio of ammonia to nitrogen trifluoride is within a range from about 10:1 to about 20:1. 
     
     
         15 . A method for removing native oxides from a substrate surface within a processing chamber, comprising:
 flowing etchant species into a processing chamber housing a substrate having the native oxides thereon to react with the substrate and form a film thereon, wherein the etchant species is flowed through a gas distribution plate, and wherein the substrate is maintained at a first temperature;   heating the gas distribution plate;   moving the substrate vertically within the chamber proximate the gas distribution plate; and   heating the substrate to a second temperature within a range from about 100° C. to 150° C. subsequent moving the substrate to sublimate the film.   
     
     
         16 . The method of  claim 15 , wherein the substrate after moving is located within a range from about 10 mils to about 200 mils from the heated gas distribution plate. 
     
     
         17 . The method of  claim 15 , wherein the first temperature is maintained by flowing a coolant through a support assembly having the substrate disposed thereon. 
     
     
         18 . The method of  claim 17 , wherein the first temperature is at about 22° C. or less. 
     
     
         19 . A method for removing native oxides from a substrate within a processing chamber, comprising:
 cooling a substrate to a first temperature at about 22° C. or less;   flowing etchant species comprising fluorine atoms through a gas distribution plate;   exposing the substrate to the etchant species and forming a film comprising the fluorine atoms on the cooled substrate; and   annealing the substrate at a second temperature of about 100° C. or greater to sublimate the film.   
     
     
         20 . The method of  claim 19 , wherein the gas distribution plate is heated to a temperature within a range from about 100° C. to about 150° C. while heating the substrate within the chamber to sublimate the film.