Crystal, semiconductor element and semiconductor device

Abstract

A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

What is claimed is: 
     
         1 . A crystal, comprising:
 a corundum structured crystalline oxide,   the crystalline oxide including gallium and/or indium, and   the crystalline oxide further including a metal of Group 4 of the periodic table.   
     
     
         2 . The crystal according to  claim 1 ,
 wherein the metal of Group 4 of the periodic table includes at least a metal selected from titanium, zirconium and hafnium.   
     
     
         3 . The crystal according to  claim 1 ,
 wherein the metal of Group 4 of the periodic table is titanium.   
     
     
         4 . The crystal according to  claim 1 ,
 wherein the crystalline oxide contains gallium.   
     
     
         5 . The crystal according to  claim 1 ,
 wherein the crystal has a shape of a film.   
     
     
         6 . The crystal according to  claim 1 ,
 wherein the crystal has an electrical conductivity.   
     
     
         7 . A semiconductor element, comprising:
 the crystal according to  claim 1 .   
     
     
         8 . A semiconductor element, comprising:
 a semiconductor layer;   an electrode that is arranged on the semiconductor layer,   the electrode includes the crystal according to  claim 6 .   
     
     
         9 . The semiconductor element according to  claim 8 ,
 wherein the semiconductor layer includes a crystalline oxide semiconductor as a major component.   
     
     
         10 . The semiconductor element according to  claim 9 ,
 wherein the crystalline oxide semiconductor has a corundum structure.   
     
     
         11 . The semiconductor element according to  claim 9 ,
 wherein the crystalline oxide semiconductor contains at least one or more metals selected from aluminum, gallium and indium.   
     
     
         12 . The semiconductor element according to  claim 7 ,
 wherein the semiconductor element is a vertical device.   
     
     
         13 . The semiconductor element according to  claim 7 ,
 wherein the semiconductor element is a power device.   
     
     
         14 . A semiconductor device, comprising:
 the semiconductor element according to  claim 7 ;   a board; and   a jointing material, and   the semiconductor element that is bonded with the board by using the jointing material,   the board is a circuit board or a heat dissipation board.   
     
     
         15 . The semiconductor device according to  claim 14 ,
 wherein the semiconductor device is a power module, an inverter, or a converter.   
     
     
         16 . The semiconductor device according to  claim 14 ,
 wherein the semiconductor device is a power card.   
     
     
         17 . A semiconductor system, comprising:
 the semiconductor element according to  claim 7 .