Imaging device and electronic device

Abstract

The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.

What is claimed is: 
     
         1 . An imaging device comprising:
 a photoelectric conversion part configured to convert received light into a charge; and   a holding part configured to hold a charge transferred from the photoelectric conversion part,   wherein the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and   the holding part is formed with a thickness that is half or less of the predetermined thickness.   
     
     
         2 . The imaging device according to  claim 1 ,
 further comprising a charge capturing region configured to capture a charge on a light incident side of a region where the holding part is formed.   
     
     
         3 . The imaging device according to  claim 2 , wherein
 a light shielding part configured to shield light is further formed between the photoelectric conversion part and the charge capturing region.   
     
     
         4 . The imaging device according to  claim 3 , wherein
 the light shielding part formed between pixels penetrates the semiconductor substrate.   
     
     
         5 . The imaging device according to  claim 2 , wherein
 the light incident side of the charge capturing region is covered with a light shielding part that shields light.   
     
     
         6 . The imaging device according to  claim 2 ,
 further comprising a discharge drain configured to discharge a charge from the charge capturing region.   
     
     
         7 . The imaging device according to  claim 6 , wherein
 an overflow path from the charge capturing region to the discharge drain is formed in a region of a light shielding part that is formed in a manner of not penetrating the semiconductor substrate.   
     
     
         8 . The imaging device according to  claim 6 , wherein
 the discharge drain is shared with an OFD.   
     
     
         9 . The imaging device according to  claim 6 , wherein
 the discharge drain is shared with a power source of a transistor.   
     
     
         10 . The imaging device according to  claim 6 , further comprising an OFG dedicated to the discharge drain. 
     
     
         11 . The imaging device according to  claim 6 , wherein
 the discharge drain is formed in a pixel adjacent to a pixel in which the charge capturing region is formed.   
     
     
         12 . The imaging device according to  claim 6 , wherein
 the discharge drain is formed on the light incident side of the charge capturing region and is common to a light shielding part that shields incident light.   
     
     
         13 . The imaging device according to  claim 6 , wherein
 the discharge drain is formed on the light incident side of the charge capturing region.   
     
     
         14 . An electronic device comprising:
 an imaging device including:   a photoelectric conversion part configured to convert received light into a charge; and   a holding part configured to hold a charge transferred from the photoelectric conversion part,   the photoelectric conversion part and the holding part being formed in a semiconductor substrate having a predetermined thickness,   the holding part being formed with a thickness that is half or less of the predetermined thickness; and   a processing unit configured to process a signal from the imaging device.